The present disclosure relates to a method for fabricating a system on integrated chip (SoIC) package. Particularly, a glue layer is deposited on sidewalls of semiconductor dies prior to depositing a dielectric filling material between the semiconductor dies. The glue layer may be a nitrogen containing layer, such as silicon nitride, silicon carbon nitride, and silicon oxygen nitride. The dielectric filling material may be a silicon oxide formed from TEOS or mDEOS. The glue layer increases adhesion between the dielectric filling material and semiconductor dies.

An electronic device according to the present disclosure includes a semiconductor substrate, a chip, a bump, and a sidewall portion. The bump connects a plurality of connection pads provided on the opposing main surfaces of the semiconductor substrate and the chip. The sidewall portion includes a porous metal layer and that annularly surrounds a region where a plurality of bumps is provided, and connects the semiconductor substrate and the chip. The chip has a thermal expansion coefficient different from that of the semiconductor substrate by 0.1 ppm/? C. or more. The chip is a semiconductor laser, and the semiconductor substrate includes a drive circuit that drives the semiconductor laser.

A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: removing a template membrane from the MNW; infiltrating the MNW with a bonding material; placing the bonding material on the adjacent surface; bringing an adjacent surface into contact with a top surface of the MNW while the bonding material is bondable; and allowing the bonding material to cool and form a solid bond between the MNW and the adjacent surface. A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: choosing a bonding material based on a desired bonding process; and without removing the MNW from a template membrane that fills an interstitial volume of the MNW, depositing the bonding material onto a tip of the MNW.

A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: removing a template membrane from the MNW; infiltrating the MNW with a bonding material: placing the bonding material on the adjacent surface; bringing an adjacent surface into contact with a top surface of the MNW while the bonding material is bondable; and allowing the bonding material to cool and form a solid bond between the MNW and the adjacent surface. A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: choosing a bonding material based on a desired bonding process; and without removing the MNW from a template membrane that fills an interstitial volume of the MNW, depositing the bonding material onto a tip of the MNW.

A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: removing a template membrane from the MNW; infiltrating the MNW with a bonding material; placing the bonding material on the adjacent surface; bringing an adjacent surface into contact with a top surface of the MNW while the bonding material is bondable; and allowing the bonding material to cool and form a solid bond between the MNW and the adjacent surface. A thermally-conductive and mechanically-robust bonding method for attaching a metal nanowire (MNW) array to an adjacent surface includes the steps of: choosing a bonding material based on a desired bonding process; and without removing the MNW from a template membrane that fills an interstitial volume of the MNW, depositing the bonding material onto a tip of the MNW.

The present disclosure relates to a method for fabricating a system on integrated chip (SoIC) package. Particularly, a glue layer is deposited on sidewalls of semiconductor dies prior to depositing a dielectric filling material between the semiconductor dies. The glue layer may be a nitrogen containing layer, such as silicon nitride, silicon carbon nitride, and silicon oxygen nitride. The dielectric filling material may be a silicon oxide formed from TEOS or mDEOS. The glue layer increases adhesion between the dielectric filling material and semiconductor dies.