A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A semiconductor device includes an insulation board, an electrode provided on the insulation board, a bonding layer provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order, and a semiconductor element bonded to the electrode via the bonding layer. A layer thickness of the bonding layer is greater than or equal to 220 μm and less than or equal to 700 μm.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.

A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.