Embodiments of the present disclosure relate to a display device and a method of manufacturing the same. More specifically, there may be provided includes a display device including an adhesive layer which includes a first portion and a second portion, wherein the first portion has higher adhesion than the second portion, and the second portion has lower adhesion than the first portion and includes high refractive particles so that a manufacturing process is simplified, and a method of manufacturing the same.

According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

A display device according to the present invention is characterized by comprising: a base part; assembly electrodes extending in one direction and formed on the base part; a dielectric layer formed so as to cover the assembly electrodes; a barrier rib part stacked on the dielectric layer while forming holes so as to overlap the assembly electrodes; semiconductor light-emitting elements disposed inside the holes; and wiring electrodes electrically connected to the semiconductor light-emitting elements, wherein the assembly electrodes are formed so as to include Al, and the holes include AlO.sub.x.

According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

Provided is a copper paste for pressure bonding, the copper paste at least containing two or more copper powders having different shapes and/or particle sizes and a solvent. The copper paste has a viscosity of 10 Pa.Math.s or more and 200 Pa.Math.s or less. The ratio of the total mass of the two or more copper powders to the mass of the copper paste, A, is 0.60 or more and less than 0.82. When the index of bulkiness, H, is defined as H=C/(AB), H is 0.75 or more and 1.00 or less, wherein A is as defined above, B represents the film thickness of a coating film formed by applying the copper paste to a substrate, and C represents the film thickness of a dried coating film formed by drying the coating film in an air atmosphere at 110 C. for 20 minutes.