A sintered member is provided between a semiconductor chip and a terminal. The sintered member is made of a sinter sheet by heating and pressing the same. The semiconductor chip is connected to the terminal via the sintered member. Convex portions are formed at a front-side surface of the semiconductor chip. Concave portions, each of which has such a shape corresponding to that of each convex portion of the semiconductor chip, are formed at a surface of the sintered member facing to the semiconductor chip.

A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.

Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.

In the joined body (10) in which the conductor (12) and the substrate (14) are joined by the joining material (13), the joining material (13) includes a sintered body formed by sintering silver powder. A sintered body having a porosity of 8% to 30% and a surface roughness Ra of a joining surface of 500 nm or more and 3.3 μm or less is adopted.

In the joined body (10) in which the conductor (12) and the substrate (14) are joined by the joining material (13), the joining material (13) includes a sintered body formed by sintering silver powder. A sintered body having a porosity of 8% to 30% and a surface roughness Ra of a joining surface of 500 nm or more and 3.3 μm or less is adopted.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm.sup.−1 to 4,000 cm.sup.−1 indicated by I.sub.A, and a maximum value of intensity in a wavenumber range of 450 cm.sup.−1 to 550 cm.sup.−1 is indicated by I.sub.B, I.sub.A/I.sub.B is 1.1 or greater.

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.