An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

n electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

n electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

An electro-optic assembly includes a layer of electro-optic material configured to switch optical states upon application of an electric field and an anisotropically conductive layer having one or more moisture-resistive polymers and a conductive material, the moisture-resistive polymer having a WVTR less than 5 g/(m.sup.2*d).

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.