The present disclosure provides a method for measuring an underfill profile of an underfill material in an underfill cavity having a plurality of solder bumps. The method includes the operations of: determining a mesh having a plurality of elements according to the underfill cavity; calculating a reference force according to the underfill cavity; obtaining a driving force and a flow speed of the underfill material according to a plurality of weighting factors and the reference force, wherein the plurality of weighting factors respectively correspond to the plurality of elements; obtaining a plurality of volume fractions respectively corresponding to the plurality of elements according to the flow speed; and obtaining the underfill profile according to the plurality of volume fractions.

An apparatus includes a first glass plate, and an outer layer disposed over the first glass plate. The first glass plate and the outer layer are configured to hold a semiconductor die disposed on the first glass plate, and a solder preform interposed between the semiconductor die and the outer layer. The solder preform is viewable through the first glass plate.

A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.

A method for joining an electronic part, comprising: inserting a joining silver sheet between an electronic part and a substrate, to which the electronic part is to be joined; and heating them to the temperature range of T.sub.A ( C.) or higher and T.sub.B ( C.) or lower, under application of a pressure to the electronic part and the substrate to make a contact surface pressure of the electronic part and the silver sheet of from 0.5 to 3 MPa. The joining silver sheet comprises silver particles having a particle diameter of from 1 to 250 nm integrated by sintering, and has a capability of further undergoing sintering on heating and retaining the silver sheet at a temperature range of T.sub.A ( C.) or higher and T.sub.B ( C.) or lower satisfying the following expression (1): 270T.sub.A<T.sub.B350.

Implementations of a sintering film frame may include a frame including an outer perimeter and an inner perimeter, the inner perimeter defining an opening through the frame; a position detection opening through the frame; at least two alignment holes through the frame; and a frame identifier on a side of the frame.

A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.

In a general aspect, a method includes coupling a sintering film with a carrier tape cutting the sintering film into a plurality of sintering film portions, and removing a sintering film portion of the plurality of sintering film portions from the carrier tape. The method further includes disposing the sintering film portion on a surface of a semiconductor device assembly, and performing a thermal operation to couple the sintering film portion to the surface of the semiconductor device assembly.