Patent classifications
H01L2224/29013
METHOD FOR THE LOCALIZED DEPOSITION OF A MATERIAL ON A METAL ELEMENT
A method is provided for localised deposition of a material over an element, including deposition of a portion of the material over a portion of a surface of a support; positioning of a portion of the element against the portion of the material; annealing of the material portion increasing, at the end of the treatment, the adhesion force of the material against the portion of the element, the materials of the portion of the element and of the portion of the surface of the support being selected such that the adhesion of the material against the portion of the element is, at the end of the annealing, higher than that of the material against the portion of the surface of the support; and separation of the element and the support at the interface between the material and the portion of the surface of the support, the material remaining secured to the portion of the element.
Semiconductor device
A semiconductor device includes a first electronic component, a second electronic component, a third electronic component, a plurality of first interconnection structures, and a plurality of second interconnection structures. The second electronic component is between the first electronic component and the third electronic component. The first interconnection structures are between and electrically connected to the first electronic component and the second electronic component. Each of the first interconnection structures has a length along a first direction substantially parallel to a surface of the first electronic component and a width along a second direction substantially parallel to the surface and substantially perpendicular to the first direction. The length is larger than the width. The second interconnection structures are between and electrically connected to the second electronic component and the third electronic component.
Optical module and manufacturing method of optical module
An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.
Optical module and manufacturing method of optical module
An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.
SEMICONDUCTOR DEVICE
A semiconductor device includes a first electronic component, a second electronic component, a third electronic component, a plurality of first interconnection structures, and a plurality of second interconnection structures. The first electronic component is between the second and the third electronic components. The first interconnection structures are between the first and the second electronic components. Each first interconnection structures has a length along a first direction substantially parallel to a surface of the first electronic component, and a width along a second direction substantially parallel to the surface and substantially perpendicular to the first direction. The length is larger than the width. The second interconnection structures are between the second and the third electronic components, and electrically connected to the second and the third electronic components. A height of each second interconnection structure is different from a height of each first interconnection structure.
Thermal management solutions for stacked integrated circuit devices
An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device defining a fluid chamber, wherein at least a portion of the first integrated circuit device and at least a portion of the second integrated circuit device are exposed to the fluid chamber. In further embodiments, at least one channel may be formed in an underfill material between the first integrated circuit device and the second integrated circuit device, between the first integrated circuit device and the substrate, and/or between the second integrated circuit device and the substrate, wherein the at least one channel is open to the fluid chamber.
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Since the solder 106 temporarily remaining in the first region 301 is in a state of being high in curvature, it is in point contact with the semiconductor element 105 at the vertex of the solder 106. Thereafter, the solder 106 is gradually wetted and spread from the center part to the peripheral part and from the first region 301 to the second region 302 while the semiconductor element 105 is pressed against the solder 106. At this time, since the solder 106 wets and spreads while discharging air, generation of voids can be suppressed.
Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.
Package comprising a solder resist layer configured as a seating plane for a device
A package that includes a substrate having a first surface; a solder resist layer coupled to the first surface of the substrate; a device located over the solder resist layer such that a portion of the device touches the solder resist layer; and an encapsulation layer located over the solder resist layer such that the encapsulation layer encapsulates the device. The solder resist layer is configured as a seating plane for the device. The device is located over the solder resist layer such that a surface of the device facing the substrate is approximately parallel to the first surface of the substrate. The solder resist layer includes at least one notch. The device is located over the solder resist layer such that at least one corner of the device touches the at least one notch.
ELECTROCONDUCTIVE FILM, ROLL, CONNECTED STRUCTURE, AND PROCESS FOR PRODUCING CONNECTED STRUCTURE
A conductive film includes an elongated release film and a plurality of conductive adhesive film pieces provided on the release film. Then, the plurality of adhesive film pieces are arranged in a longitudinal direction X of the release film. For this reason, the adhesive film piece can be set to an arbitrary shape. Accordingly, it is possible to attach the adhesive film piece to adhesive surfaces having various shapes and to efficiently use the adhesive film piece.