A chip is mounted on a surface of the substrate, and the thermally conductive cover is disposed on a side that is of the chip and that is away from the substrate. There is a filling area on a surface that is of the thermally conductive cover and that faces the substrate, and the filling area is opposite to the chip. There is an accommodation cavity whose opening faces the substrate in the filling area. A thermal interface material layer is filled between the chip and a bottom surface of the accommodation cavity. Between an opening edge of the accommodation cavity and the substrate, there is a first gap connected to the accommodation cavity. The filling material encircles a side surface of the thermal interface material layer, so that the filling material separates the side surface of the thermal interface material layer from air.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate. The circuit board has a first disposition area and a second disposition area with a gap therebetween, and a groove portion, of which a longitudinal direction is parallel to the gap, formed in the gap. The semiconductor device further includes a first semiconductor chip and a second semiconductor chip located on the circuit board in the first disposition area and the second disposition area, respectively, and a blocking member located in the gap across the groove portion in parallel to the longitudinal direction in a plan view of the semiconductor device.

A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate. The circuit board has a first disposition area and a second disposition area with a gap therebetween, and a groove portion, of which a longitudinal direction is parallel to the gap, formed in the gap. The semiconductor device further includes a first semiconductor chip and a second semiconductor chip located on the circuit board in the first disposition area and the second disposition area, respectively, and a blocking member located in the gap across the groove portion in parallel to the longitudinal direction in a plan view of the semiconductor device.

Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.