A die placement system provides a tip body and die placement head to ensure planarity of a die to substrate without the need for calibration prior to each pick and place operation. A self-aligning tip incorporated into a tip body aids in die placement/attachment. This tip provides for global correction of planarity errors that exist between a die and substrate, regardless of whether those errors stem from gantry (i.e. die-side misalignment) or machine deck tool (i.e. substrate-side misalignment) misalignment.

The disclosure is directed to an integrated circuit (IC) die stacked with a backer die, including capacitors and thermal vias. The backer die includes a substrate material to contain and electrically insulate one or more capacitors at a back of the IC die. The backer die further includes a thermal material that is more thermally conductive than the substrate material for thermal spreading and increased heat dissipation. In particular, the backer die electrically couples capacitors to the IC die in a stacked configuration while also spreading and dissipating heat from the IC die. Such a configuration reduces an overall footprint of the electronic device, resulting in decreased integrated circuits (IC) packages and module sizes. In other words, instead of placing the capacitors next to the IC die, the capacitors are stacked on top of the IC die, thereby reducing an overall surface area of the package.

A solder material may include nickel and tin. The nickel may include first and second amounts of particles. A sum of the particle amounts is a total amount of nickel or less. The first amount is between 5 at % and 60 at % of the total amount of nickel. The second amount is between 10 at % and 95 at % of the total amount of nickel. The particles of the first amount have a first size distribution, the particles of the second amount have a second size distribution, 30% to 70% of the first amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the first size distribution, and 30% to 70% of the second amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the second size distribution.

An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

An electronic element mounting substrate includes: a first substrate including a first principal face; a second substrate located inside the first substrate in a plan view of the electronic element mounting substrate, the second substrate being made of a carbon material; a third substrate located between the first substrate and the second substrate in the plan view, the third substrate being made of a carbon material; and a first mounting portion for mounting a first electronic element, the first mounting portion being located on the first principal face side in a thickness direction of the substrate. The second substrate and the third substrate each have a low heat conduction direction and a high heat conduction direction. The second substrate and the third substrate is arranged so that the low heat conduction directions thereof are perpendicular to each other, and the high heat conduction directions thereof are perpendicular to each other.