A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, an element selected from the group consisting of: more than 0 and 1.0% by mass or less of Si, more than 0 and 0.1% by mass or less of V, 0.001 to 0.1% by mass of Ge, 0.001 to 0.1% by mass of P, and more than 0 and 1.2% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.