Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
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H01L2224/29
of an individual layer connector
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H01L2224/29001
Core members of the layer connector
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H01L2224/29198
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/292
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/29263
the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/29272
Vanadium [V] as principal constituent
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H01L2224/29272

SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE
20210407953 · 2021-12-30 · ·

A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, an element selected from the group consisting of: more than 0 and 1.0% by mass or less of Si, more than 0 and 0.1% by mass or less of V, 0.001 to 0.1% by mass of Ge, 0.001 to 0.1% by mass of P, and more than 0 and 1.2% by mass or less of Cu, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

Solder material for semiconductor device
11145615 · 2021-10-12 · ·

A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE
20200303337 · 2020-09-24 · ·

A lead-free solder has a heat resistance temperature which is high and a thermal conductive property which is not changed in a high temperature range. A semiconductor device includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities. A bonding layer including the solder material, is formed between a semiconductor element and a substrate electrode or a lead frame.

Solder material for semiconductor device
10727194 · 2020-07-28 · ·

To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.

SOLDER MATERIAL FOR SEMICONDUCTOR DEVICE
20180033761 · 2018-02-01 · ·

To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range. A semiconductor device of the present invention includes a solder material containing more than 5.0% by mass and 10.0% by mass or less of Sb and 2.0 to 4.0% by mass of Ag, and the remainder consisting of Sn and inevitable impurities, and a bonding layer including the solder material, which is formed between a semiconductor element and a substrate electrode or a lead frame.