Patent classifications
H01L2224/2928
Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device
Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.
Metal paste and use thereof for joining components
The invention relates to a metal paste, containing (A) 75 to 90% by weight of copper and/or silver particles that are provided with a coating containing at least one organic compound, (B) 5 to 20% by weight of an organic solvent, and (C) 2 to 20% by weight of at least one type of metal particles different from the particles of (A) and having an average particle size (d50) in the range of 0.2 to 10 μm. The metal particles of component (C) are selected from the group consisting of molybdenum particles and nickel core-silver shell particles with a silver content of 10 to 90% by weight.
Sintering pastes with high metal loading for semiconductor die attach applications
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
METAL PASTE FOR JOINTS, ASSEMBLY, PRODUCTION METHOD FOR ASSEMBLY, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.
SINTERING PASTES WITH HIGH METAL LOADING FOR SEMICONDUCTOR DIE ATTACH APPLICATIONS
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
METAL PASTE AND USE THEREOF FOR JOINING COMPONENTS
The invention relates to a metal paste, containing (A) 75 to 90% by weight of copper and/or silver particles that are provided with a coating containing at least one organic compound, (B) 5 to 20% by weight of an organic solvent, and (C) 2 to 20% by weight of at least one type of metal particles different from the particles of (A) and having an average particle size (d50) in the range of 0.2 to 10 m. The metal particles of component (C) are selected from the group consisting of molybdenum particles and nickel core-silver shell particles with a silver content of 10 to 90% by weight.
CONDUCTIVE JOINING MATERIAL AND CONDUCTIVE JOINING STRUCTURE WHICH USE METAL PARTICLES AND CONDUCTIVE MATERIAL PARTICLES
A conductive joining material and conductive joined structure for joining two joining members by a joining layer using metal nanoparticles at the time of which even if there is a difference in the amounts of heat expansion due to a difference in linear thermal expansion coefficients between these two joining members and further use at a high temperature is sought, it is possible to adjust the amount of heat expansion of the joining layer to a suitable value between the two joining members to ease the thermal stress occurring at the joining layer and possible to sufficiently hold the joint strength between the two joining members are provided.
A conductive joining material containing metal nanoparticles, microparticles of a conductive material, and a solvent, wherein the conductive material forming the microparticles has a linear thermal expansion coefficient smaller than the linear thermal expansion coefficient of the metal forming the nanoparticles and the microparticles of conductive material have an average particle size of 0.5 to 10 m.