This member connection method includes: a cutting step of forming cutting lines C in an adhesive layer at predetermined intervals at least in a width direction of an adhesive tape and making segments of the adhesive layer divided by the cutting lines C continuous at least in a lengthwise direction of the adhesive tape; a transfer step of disposing the segments to face a connection surface of one member to be connected, pressing a heating and pressing tool having an arbitrary pattern shape against the adhesive tape from a separator side and selectively transferring the segments to the one member to be connected; and a connection step for connecting another member to be connected to the one member to be connected via the segments transferred to the one member to be connected.

Some implementations of the disclosure relate to a lead-free solder paste with mixed solder powders that is particularly suitable for high temperature soldering applications involving multiple board-level reflow operations. In one implementation, the solder paste consists of 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of an SnSbCuAg solder alloy that has a wt % ratio of Sn:Sb of 0.75 to 1.1; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn solder alloy including at least 80 wt % of Sn; and a remainder of flux.

Some implementations of the disclosure relate to a lead-free solder paste with mixed solder powders that is particularly suitable for high temperature soldering applications involving multiple board-level reflow operations. In one implementation, the solder paste consists of 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of an SnSbCuAg solder alloy that has a wt % ratio of Sn:Sb of 0.75 to 1.1; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn solder alloy including at least 80 wt % of Sn; and a remainder of flux.

A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Some implementations of the disclosure relate to a lead-free solder paste with mixed solder powders that is particularly suitable for high temperature soldering applications involving multiple board-level reflow operations. In one implementation, the solder paste consists of 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of an SnSbCuAg solder alloy that has a wt % ratio of Sn:Sb of 0.75 to 1.1; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn solder alloy including at least 80 wt % of Sn; and a remainder of flux.

Some implementations of the disclosure relate to a lead-free solder paste with mixed solder powders that is particularly suitable for high temperature soldering applications involving multiple board-level reflow operations. In one implementation, the solder paste consists of 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of an SnSbCuAg solder alloy that has a wt % ratio of Sn:Sb of 0.75 to 1.1; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn solder alloy including at least 80 wt % of Sn; and a remainder of flux.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. The lower portion has a width is wider than of the upper portion.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. The lower portion has a width is wider than of the upper portion.

Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.