A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

According to one embodiment, a metallic particle paste includes a polar solvent and particles dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent.

An integrated circuit die with two material layers having metal nano-particles and the method of forming the same are provided. The integrated circuit die includes a device layer comprising a first transistor, a first interconnect structure on a first side of the device layer, a first material layer on the first interconnect structure, wherein the first material layer comprises first metal nano-particles, and a second material layer bonded to the first material layer, wherein the second material layer comprises second metal nano-particles, and wherein the first material layer and the second material layer share an interface.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.