According to embodiments of the present disclosure, a semiconductor package is provided. The semiconductor package includes a substrate including a first surface and a second surface opposite to the first surface; and a plurality of lower pads on the second surface at different intervals. The semiconductor package further includes: a plurality of bumps attached to the plurality of lower pads; a first non-conductive film on the second surface of the substrate; and a second non-conductive film on the first non-conductive film. A plurality of regions are defined in the semiconductor package according to a separation distance between the plurality of bumps, such that each region of the plurality of regions includes respective bumps, from among the plurality of bumps, that have a respective separation distance between neighboring ones of the respective bumps within the region. A sum of thicknesses of the first and second non-conductive films is constant.

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.