A solder material for use in electronic assembly, the solder material comprising: solder layers; and a core layer comprising a core material, the core layer being sandwiched between the solder layers, wherein: the thermal conductivity of the core material is greater than the thermal conductivity of the solder.

A solder material for use in electronic assembly, the solder material comprising: solder layers; and a core layer comprising a core material, the core layer being sandwiched between the solder layers, wherein: the thermal conductivity of the core material is greater than the thermal conductivity of the solder.

A film-shaped firing material 1 is provided, including sinterable metal particles 10 and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a shrinkage factor in a planar direction of the film-shaped firing material after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes is 10% or less with respect to the shrinkage factor before the firing, and a volume shrinkage factor thereof is in a range of 15% to 90% with respect to the volume shrinkage factor before the firing, and a contact ratio of the film-shaped firing material with an adherend after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes in a state in which the film-shaped firing material is in contact with the adherend is 90% or greater with respect to a contact area of the adherend.

A film-shaped firing material 1 is provided, including sinterable metal particles 10 and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a shrinkage factor in a planar direction of the film-shaped firing material after being pressurized and fired under conditions of a temperature of 350 C. and a pressure of 10 MPa for 3 minutes is 10% or less with respect to the shrinkage factor before the firing, and a volume shrinkage factor thereof is in a range of 15% to 90% with respect to the volume shrinkage factor before the firing, and a contact ratio of the film-shaped firing material with an adherend after being pressurized and fired under conditions of a temperature of 350 C. and a pressure of 10 MPa for 3 minutes in a state in which the film-shaped firing material is in contact with the adherend is 90% or greater with respect to a contact area of the adherend.

A method includes applying a die attach material to a die pad of an integrated circuit package. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit package to mitigate delamination between the integrated circuit die and the die pad.

A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.

A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.