Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/26
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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H01L2224/28
Structure, shape, material or disposition of the layer connectors prior to the connecting process
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H01L2224/29
of an individual layer connector
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H01L2224/29686
with a principal constituent of the material being a non metallic, non metalloid inorganic material
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H01L2224/29688
Glasses, e.g. amorphous oxides, nitrides or fluorides
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H01L2224/29688

Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method
10247630 · 2019-04-02 · ·

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

SEMICONDUCTOR DEVICE, MECHANICAL QUANTITY MEASURING DEVICE, AND SEMICONDUCTOR DEVICE FABRICATING METHOD
20180202883 · 2018-07-19 · ·

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

COMPOSITE THERMAL HOTSPOT MANAGEMENT IN DIE PACKAGING
20250357263 · 2025-11-20 ·

A device package includes a diamond heat spreader and a filler material bonded to a first side of the diamond heat spreader. A first integrated circuit (IC) device coupled to a second side of the diamond heat spreader opposite the filler material. A second IC device wherein a first side of the filler material opposite of a side bonded to the heat spreader shares a horizontal plane with a top side of the second IC device.