A semiconductor arrangement includes a semiconductor substrate having a dielectric insulation layer and at least a first metallization layer arranged on a first side of the dielectric insulation layer. The first metallization layer includes at least two sections, each section being separated from a neighboring section by a recess. A semiconductor body is arranged on one of the sections of the first metallization layer. At least one indentation is arranged between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.

An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

A method for producing a semiconductor arrangement includes: forming a first metallization layer on a first side of a dielectric insulation layer, the first metallization layer having at least two sections, each section being separated from a neighboring section by a recess; arranging a semiconductor body on one of the sections of the first metallization layer; and forming at least one indentation between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.

A semiconductor package includes a circuit board, an interposer structure on the circuit board, a first semiconductor chip and a second semiconductor chip on the interposer structure, the first and the second semiconductor chips electrically connected to the interposer structure and spaced apart from each other, and a mold layer between the first and second semiconductor chips, the mold layer separating the first and second semiconductor chips. A slope of a side wall of the mold layer is constant as the side wall extends away from an upper side of the interposer structure, and an angle defined by a bottom side of the mold layer and the side wall of the mold layer is less than or equal to ninety degrees.

A semiconductor package includes a first semiconductor die, an adhesive layer, a second semiconductor die, a plurality of conductive pillars and an encapsulant. The adhesive layer is adhered to the first semiconductor die. The second semiconductor die is stacked over the first semiconductor die. The conductive pillars surround the first semiconductor die. The encapsulant encapsulates the first semiconductor die and the conductive pillars, wherein a top surface of the encapsulant is higher than top surfaces of the conductive pillars

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.

Semiconductor packages and methods of forming the same are provided. One of the semiconductor packages includes a first semiconductor die, an adhesive layer, a second semiconductor die and an underfill. The first semiconductor die includes a first surface, and the first surface includes a central region and a peripheral region surrounding the central region. The adhesive layer is adhered to the peripheral region and exposes the central region. The second semiconductor die is stacked over the first surface of the first semiconductor die. The underfill is disposed between the first semiconductor die and the second semiconductor die.

A package device preventing solder overflow provides a space or structure to limit the location of the solder when dispensing the solder. The package device includes a die, an anti-overflow layer, a first pin, a second pin, and a package body. The die has an electrode pad. The anti-overflow layer is disposed on a top surface of the electrode pad and has an opening to expose the top surface of the electrode pad. The first pin is connected to the die. The second pin is soldered to the electrode pad of the die through the opening of the anti-overflow layer. The package body covers the die.

Semiconductor packages and methods of forming the same are provided. One of the semiconductor packages includes a first semiconductor die, an adhesive layer, a second semiconductor die and an underfill. The first semiconductor die includes a first surface, and the first surface includes a central region and a peripheral region surrounding the central region. The adhesive layer is adhered to the peripheral region and exposes the central region. The second semiconductor die is stacked over the first surface of the first semiconductor die. The underfill is disposed between the first semiconductor die and the second semiconductor die.