A method includes forming one or more vias in a first layer, forming one or more vias in at least a second layer different than the first layer, aligning at least a first via in the first layer with at least a second via in the second layer, and bonding the first layer to the second layer by filling the first via and the second via with solder material using injection molded soldering.

A display device includes a first base layer including a first opening; a first barrier layer located on a surface of the first base layer, and including a second opening; and a pad electrode located on the first barrier layer and overlapping the second opening in a plan view. At least one first groove is formed at a surface of the first barrier layer, a second groove is formed at a surface of the pad electrode, and the first opening exposes the at least one first groove and the second groove.

A semiconductor module includes a housing, a pin arranged in the housing and including a first contact region which has a press-fit connection, a semiconductor component arranged in the housing and electrically conductively connected to the pin, and a first substrate arranged in the housing and clamped in the housing via the pin by a non-positive locking connection, which, when formed, causes the press-fit connection to be deformed elastically and/or plastically with the first substrate. The first substrate has a first recess which is open and at least in part encompasses the pin in the first contact region. A metallic coating is applied to the first substrate at least in a region of the first recess so as to electrically conductively connect the first substrate to the semiconductor component, and a second substrate is in contact with the pin and connected within the housing in a non-releasable manner.

A semiconductor device includes: a semiconductor base body; a semiconductor chip; a sintering material layer bonded to a lower surface of the semiconductor chip and having a thickness decreasing toward an outer periphery of the semiconductor chip; and a conductive plate having a main surface facing the lower surface of the semiconductor chip and a recessed portion which the sintering material layer contacts in the main surface, the recessed portion having a depth decreasing toward the outer periphery of the semiconductor chip.

A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.

A semiconductor device includes a substrate, an electronic component, a cover, a heat conduction component and a dam. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The heat conduction component is disposed between the electronic component and the cover. The dam is disposed between the electronic component and the cover and surrounds the heat conduction component.

Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device according to an embodiment of the inventive concept includes a first semiconductor chip having a recess portion in one surface thereof; a first adhesion pattern filled within the recess portion of the first semiconductor chip; and a second semiconductor chip disposed on the first adhesion pattern. The second semiconductor chip may represent improved heat dissipation characteristics.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A method includes forming one or more vias in a substrate, forming a first photoresist layer on a top surface of the substrate and a second photoresist layer on a bottom surface of the substrate, patterning the first photoresist layer and the second photoresist layer to remove at least a first portion of the first photoresist layer and at least a second portion of the second photoresist layer, filling the one or more vias, the first portion and the second portion with solder material using injection molded soldering, and removing remaining portions of the first photoresist layer and the second photoresist layer.

In a light emitting device, in a bottom surface of a cavity of a Si substrate, slit-shaped through holes and through electrodes that fill the through holes are provided at a position facing a first element electrode of a light emitting element. A length of an upper surface of the through electrode in a long axis direction is larger than a height of the through electrode in a thickness direction of the Si substrate. A joining layer having a shape corresponding to a shape of the upper surface of the through electrode is disposed between the first element electrode of the light emitting element and the upper surface of the through electrode facing the first element electrode. The entire upper surface of the through electrode is joined to the first element electrode via the joining layer.