An electronic component package includes: a frame, including a through-hole and a through-wiring; an electronic component disposed in the through-hole of the frame; a metal plate disposed on a first side of the electronic component and the frame; and a redistribution layer disposed on a second side of the electronic component opposing the first side and electrically connected to the electronic component.

A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.

A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.

A semiconductor device includes a circuit substrate having a first metal layer on a first side, a second metal later on a second side, and an insulating layer between the first and second metal layers. A semiconductor chip is on the first side of the circuit substrate. A metal plate is on the second side. A solder layer is between the metal plate and the second metal layer. The second metal layer includes a protruding region which extends to a first thickness towards the metal plate, a first recessed region, and a second recessed region, each adjacent to the protruding region. The first recessed region extends to a second thickness that is less than the first thickness, and the second recessed region extends to a third thickness that is less than the first thickness.

A semiconductor package apparatus includes a passive device that is embedded in a bottom package stiffener, and a top stiffener is stacked above the bottom package stiffener. Electrical connection through the passive device is accomplished through the stiffeners to a semiconductor die that is seated upon an infield region of the semiconductor package substrate.

A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.

Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

An electronic component package includes: a frame, including a through-hole and a through-wiring; an electronic component disposed in the through-hole of the frame; a metal plate disposed on a first side of the electronic component and the frame; and a redistribution layer disposed on a second side of the electronic component opposing the first side and electrically connected to the electronic component.

Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

An electronic component package includes: a frame, including a through-hole and a through-wiring; an electronic component disposed in the through-hole of the frame; a metal plate disposed on a first side of the electronic component and the frame; and a redistribution layer disposed on a second side of the electronic component opposing the first side and electrically connected to the electronic component.