A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A semiconductor module includes a semiconductor device having a gate runner extending in a first direction at an upper surface of the semiconductor device, and a metal wiring plate having a first bonding portion with a bonding surface to which the upper surface of the semiconductor device is bonded via a first bonding material. The first bonding portion has a plurality of first protrusions at the bonding surface. Each first protrusion protrudes toward the semiconductor device, and is provided in a position away from the gate runner by a first distance in a plan view of the semiconductor module.

Provided is a semiconductor module including: an insulating circuit board having a circuit pattern formed in one surface; a semiconductor chip placed in the insulating circuit board; and a wiring portion for electrically connecting the semiconductor chip and the circuit pattern. The wiring portion includes a chip connecting portion connected to the semiconductor chip. A surface of the chip connecting portion includes: a plurality of concave portions; and a flat portion disposed between two concave portions.

Provided is a semiconductor module including: an insulating circuit board having a circuit pattern formed in one surface; a semiconductor chip placed in the insulating circuit board; and a wiring portion for electrically connecting the semiconductor chip and the circuit pattern. The wiring portion includes a chip connecting portion connected to the semiconductor chip. A surface of the chip connecting portion includes: a plurality of concave portions; and a flat portion disposed between two concave portions.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.