A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

Provided is a clip structure for a semiconductor package comprising: a first bonding unit bonded to a terminal part of an upper surface or a lower surface of a semiconductor device by using a conductive adhesive interposed therebetween, a main connecting unit which is extended and bent from the first bonding unit, a second bonding unit having an upper surface higher than the upper surface of the first bonding unit, an elastic unit elastically connected between the main connecting unit and one end of the second bonding unit, and a supporting unit bent and extended from the other end of the second bonding unit toward the main connecting unit, wherein the supporting unit is formed to incline at an angle of 1° through 179° from an extended surface of the main connecting unit and has an elastic structure so that push-stress applying to the semiconductor device while molding may be dispersed.

A semiconductor package according to an embodiment of the present invention Includes: a lead frame comprising a pad and a lead spaced apart from the pad by a regular interval; a semiconductor chip adhered on the pad; and a clip structure electrically connecting the semiconductor chip and the lead, wherein an one end of the clip structure connected to the semiconductor chip inclines with respect to upper surfaces of chip pads of the semiconductor chip and is adhered to the upper surfaces of the chip pads of the semiconductor chip. A semiconductor package according to another embodiment of the present invention includes: a semiconductor chip comprising one or more chip pads; one or more leads electrically connected to the chip pads; and a sealing member covering the semiconductor chip, wherein an one end of the lead inclines with respect to one surface of the chip pad and is adhered to the chip pad and an other end of the lead is exposed to the outside of the sealing member.

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

One aspect of the invention relates to an electronic module comprising a module housing and an electrically conductive connection element. The connection element has a first portion and a second portion, and also a shaft between the first portion and the second portion. The connection element, which is provided with a non-metallic coating in the region of the shaft, is injected together with the coating in the region of the shaft into the module housing, such that the connection element is fixed in the module housing.

One aspect of the invention relates to an electronic module comprising a module housing and an electrically conductive connection element. The connection element has a first portion and a second portion, and also a shaft between the first portion and the second portion. The connection element, which is provided with a non-metallic coating in the region of the shaft, is injected together with the coating in the region of the shaft into the module housing, such that the connection element is fixed in the module housing.

A semiconductor package according to an embodiment of the present invention Includes: a lead frame comprising a pad and a lead spaced apart from the pad by a regular interval; a semiconductor chip adhered on the pad; and a clip structure electrically connecting the semiconductor chip and the lead, wherein an one end of the clip structure connected to the semiconductor chip inclines with respect to upper surfaces of chip pads of the semiconductor chip and is adhered to the upper surfaces of the chip pads of the semiconductor chip. A semiconductor package according to another embodiment of the present invention includes: a semiconductor chip comprising one or more chip pads; one or more leads electrically connected to the chip pads; and a sealing member covering the semiconductor chip, wherein an one end of the lead inclines with respect to one surface of the chip pad and is adhered to the chip pad and an other end of the lead is exposed to the outside of the sealing member.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.