An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

A package and method of making a package is disclosed. In one example, the package includes an electronic chip having at least one pad, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive contact element extending from the at least one pad and through the encapsulant so as to be exposed with respect to the encapsulant. The electrically conductive contact element comprises a first contact structure made of a first electrically conductive material on the at least one pad and comprises a second contact structure made of a second electrically conductive material and being exposed with respect to the encapsulant. At least one of the at least one pad has at least a surface portion which comprises or is made of the first electrically conductive material.

A semiconductor device package includes a die pad having a die attach surface, a first lead that is spaced apart and extends away from a first side of the die pad, and a semiconductor die mounted on the die attach surface. The semiconductor die includes a first bond pad disposed on an upper side of the semiconductor die that is opposite the die attach surface. A first clip electrically connects the first lead to the first bond pad. The first bond pad is elongated with first and second longer edge sides that are opposite one another and extend along a length of the first bond pad. The semiconductor die is oriented such that the first and second longer edge sides of the first bond pad are non-parallel to a first current flow direction of the first clip that extends between the first bond pad and the first lead.

A package and method of making a package is disclosed. In one example, the package includes an electronic chip having at least one pad, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive contact element extending from the at least one pad and through the encapsulant so as to be exposed with respect to the encapsulant. The electrically conductive contact element comprises a first contact structure made of a first electrically conductive material on the at least one pad and comprises a second contact structure made of a second electrically conductive material and being exposed with respect to the encapsulant. At least one of the at least one pad has at least a surface portion which comprises or is made of the first electrically conductive material.

A semiconductor device package includes a die pad having a die attach surface, a first lead that is spaced apart and extends away from a first side of the die pad, and a semiconductor die mounted on the die attach surface. The semiconductor die includes a first bond pad disposed on an upper side of the semiconductor die that is opposite the die attach surface. A first clip electrically connects the first lead to the first bond pad. The first bond pad is elongated with first and second longer edge sides that are opposite one another and extend along a length of the first bond pad. The semiconductor die is oriented such that the first and second longer edge sides of the first bond pad are non-parallel to a first current flow direction of the first clip that extends between the first bond pad and the first lead.

The embodiments of the present disclosure relate to a power package module of multiple power chips and a method of manufacturing a power chip unit. The power package module of multiple power chips includes: a power chip unit including at least two power chips placed in parallel and a bonding part bonding the two power chips; and a substrate supporting the power chip unit and including a metal layer electronically connecting with the power chip unit, wherein the bonding part is made from an insulated material with cohesiveness, the distance of a gap between the two power chips placed in parallel is smaller than or equal to a preset width, and the bonding part is filled in the gap, insulatedly bonding the two power chips placed in parallel, and wherein side surfaces of the two power chips are naked except the portions contacting the bonding part.

A semiconductor package includes: a semiconductor transistor die having an emitter/source contact pad, a drain/collector contact pad, and a gate contact pad; at least two electrical connectors disposed in a symmetrical manner on opposing lateral sides of the semiconductor die and connected with at least one of the contact pads; and an encapsulant embedding the semiconductor transistor die. The two or more electrical connectors extend through the encapsulant and form protruding sections above an upper surface of the encapsulant.

The embodiments of the present disclosure relate to a power package module of multiple power chips and a method of manufacturing a power chip unit. The power package module of multiple power chips includes: a power chip unit including at least two power chips placed in parallel and a bonding part bonding the two power chips; a substrate supporting the power chip unit and including a metal layer electronically connecting with the power chip unit; and a sealing layer isolating the power chip unit on the substrate from surroundings to seal the power chip unit; the bonding part and the sealing layer are made from different insulated material, the distance of a gap between the two power chips placed in parallel is smaller than or equal to a preset width, and the bonding part is filled in the gap, insulatedly bonding the two power chips placed in parallel.

An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

A semiconductor device and a method of forming an airbridge extending from a conductive area of the semiconductor device are provided. The semiconductor device includes a device pattern formed on a semiconductor substrate, a seed layer formed on the device pattern, and an airbridge formed on the seed layer, where the airbridge includes a plated conductive material and defines an opening exposing a portion of the device pattern. The semiconductor device further includes an adhesion layer formed on the airbridge layer and extending over at least a portion of sidewalls of the opening defined by the airbridge, and an insulating layer formed on the adhesion layer, where the adhesion layer enhances adhesion of the insulating layer to the plated conductive material of the airbridge.