A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

A power module is provided. The power module includes a substrate, a power conversion chip that is disposed on the substrate and an insulating film that is formed on a structure in which the power conversion chip is disposed on the substrate. Additionally, the power module includes a metal mold that encases the structure that is coated with the insulating film. Additionally, the power module provides a simplified structure and improved heat dissipation performance compared to conventional power modules.

An embodiment related to a device. The device includes a first die with first and second die surfaces. The second die surface is bonded to a first die attach pad (DAP) disposed on a first substrate surface of a package substrate and the first die surface includes a first die contact pad. The device also includes a first clip bond including a first clip bond horizontal planar portion attached to the first die contact pad on the first die surface, and a first clip bond vertical portion disposed on an edge of the first clip bond horizontal planar portion. The first clip bond vertical portion is attached to a first substrate bond pad on the first substrate surface. The device further includes a first conductive clip-die bonding layer with spacers on the first die contact pad of the first die. The first conductive clip-die bonding layer bonds the first clip bond horizontal planar portion to the first die contact pad, and the spacers maintain a uniform Bond Line Thickness (BLT) of the first conductive clip-die bonding layer.

Implementations of semiconductor packages may include: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die, wherein the pin includes a reversibly elastically deformable lower portion configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate.

A substrate, a packaged structure, and an electronic device are provided. The substrate is configured to be electrically connected to a chip. The chip includes a power terminal and a signal terminal. The substrate includes a first substrate and a second substrate mounted on the first substrate. The first substrate includes a first layout, and the first layout is configured to be electrically connected to the power terminal. The second substrate includes a second layout, and the second layout is configured to be electrically connected to the signal terminal. A spacing between lines of the second layout is less than a spacing between lines of the first layout. The substrate provided in this application has a small size and high integration.

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

In general aspect, a module can include a substrate having a semiconductor circuit implemented thereon, and a negative power supply terminal electrically coupled with the semiconductor circuit via the substrate. The negative power supply terminal includes a connection tab arranged in a first plane. The module also includes a first positive power supply terminal electrically and a second positive power supply terminal that are coupled with the semiconductor circuit via the substrate. The first positive power supply terminal being laterally disposed from the negative power supply terminal, and including a connection tab arranged in the first plane. The second positive power supply terminal is laterally disposed from the negative power supply terminal and arranged in the first plane, such that the negative power supply terminal is disposed between the first positive power supply terminal and the second positive power supply terminal.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A method for producing a power semiconductor system includes packaging a power device in plastic to form a power semiconductor component, forming a first heat dissipation face on a surface of the power semiconductor component; heating a first material between a first heat sink and the first heat dissipation face; and cooling the first material on the first heat dissipation face to connect the power semiconductor component and the first heat sink.