Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7. Provided is a semiconductor module including: a semiconductor device including a transistor portion and a diode portion provided in a semiconductor substrate; an external connection terminal electrically connected to the semiconductor device; and a coupling portion for electrically connecting the semiconductor device and the external connection terminal. The coupling portion may be in plane contact with a front surface electrode of the semiconductor device at a predetermined junction surface. An area ratio of the transistor portion to the diode portion may be larger than 2.8 and smaller than 4.7.

A semiconductor device includes a semiconductor chip that has a first main electrode on a rear surface thereof and a second main electrode on a front surface thereof, and a wiring layer electrically connected to at least one of the first main electrode or the second main electrode. The wiring layer includes a conductive member that is disposed on a front surface of the wiring layer.

A semiconductor device disclosed herein may include: a semiconductor element including an electrode on a surface of the semiconductor element; and a terminal bonded to the electrode via a bonding material, wherein the electrode may include a protrusion portion that protrudes toward the terminal and is in contact with the bonding material.

A semiconductor device disclosed herein may include: a semiconductor element including an electrode on a surface of the semiconductor element; and a terminal bonded to the electrode via a bonding material, wherein the electrode may include a protrusion portion that protrudes toward the terminal and is in contact with the bonding material.

A semiconductor device includes a first conductive member, a second conductive member spaced apart from the first conductive member in a first direction, a first semiconductor element bonded to the first conductive member, a second semiconductor element bonded to the second conductive member, a third conductive member, a fourth conductive member electrically connecting the first semiconductor element to the second conductive member, and a fifth conductive member electrically connecting the second semiconductor element to the third conductive member. The third conductive member includes a first portion located between the first semiconductor element and the second semiconductor element in the first direction, and the first portion faces the first conductive member in the thickness direction. One end of the fifth conductive member is bonded to the first portion. The fourth conductive member straddles the first portion.