Semiconductor device A1 of the present disclosure includes: semiconductor element 10 (semiconductor elements 10A and 10B) having element obverse face and element reverse face facing toward opposite sides in z direction; support substrate 20 supporting semiconductor element 10; conductive block 60 (first block 61 and second block 62) bonded to element obverse face via first conductive bonding material (block bonding materials 610 and 620); and metal member (lead member 40 and input terminal 32) electrically connected to semiconductor element 10 via conductive block 60. Conductive block 60 has a thermal expansion coefficient smaller than that of metal member. Conductive block 60 and metal member are bonded to each other by a weld portion (weld portions M4 and M2) at which a portion of conductive block 60 and a portion of metal member are welded to each other. Thus, the thermal cycle resistance can be improved.

The present inventive concept relates to a foldable layered connection comprising: a substrate having a first major surface and an opposing second major surface; a node of connector material arranged to contact the substrate via the first major surface; a released extension comprising a core of connector material arranged to be in communicative contact with the node of connector material, and flexible material arranged to at least partially enclose the core; wherein the released extension is configured to be hingedly connected to the node and to fold towards the second major surface, and wherein a portion of the core of connector material is exposed, forming a contact of connector material, wherein the contact is electrically isolated from the second major surface and arranged such that it is facing away from the second major surface when the released extension is folded towards the second major surface.

A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.

A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.

Semiconductor device A1 of the present disclosure includes: semiconductor element 10 (semiconductor elements 10A and 10B) having element obverse face and element reverse face facing toward opposite sides in z direction; support substrate 20 supporting semiconductor element 10; conductive block 60 (first block 61 and second block 62) bonded to element obverse face via first conductive bonding material (block bonding materials 610 and 620); and metal member (lead member 40 and input terminal 32) electrically connected to semiconductor element 10 via conductive block 60. Conductive block 60 has a thermal expansion coefficient smaller than that of metal member. Conductive block 60 and metal member are bonded to each other by a weld portion (weld portions M4 and M2) at which a portion of conductive block 60 and a portion of metal member are welded to each other. Thus, the thermal cycle resistance can be improved.