A semiconductor module includes: an insulation layer; a semiconductor element that includes a main electrode and is mounted on the insulation layer; a wiring member that is electrically connected to the main electrode of the semiconductor element; a first resin that encases the semiconductor element and the wiring member; and a second resin that covers a part of the wiring member. A thermal decomposition temperature or a melting point of the second resin is greater than a maximum of guaranteed operating temperature of the semiconductor element and is less than a thermal decomposition temperature or a melting point of the first resin.

According to an aspect, a power electronic module includes a substrate, a semiconductor die coupled to the substrate, and a clip member configured to secure the semiconductor die to the substrate, where the clip member includes a base portion having a surface coupled to the semiconductor die, an extender portion that extends from the base portion, where the extender portion includes a contact portion coupled to the substrate, and at least one protrusion that extends from the base portion or the extender portion.

A semiconductor module includes a substrate, two bare chips (semiconductor elements) mounted on the substrate, and a case fixed to the substrate. A conductor pattern and five signal patterns are provided for each bare chip on an upper surface of an insulating substrate. Signal electrodes and the signal patterns of the bare chips are connected to by conductive plates. An insulating member is provided on connecting portions of the conductive plates.

A semiconductor module includes a substrate, two bare chips (semiconductor elements) mounted on the substrate, and a case fixed to the substrate. A conductor pattern and five signal patterns are provided for each bare chip on an upper surface of an insulating substrate. Signal electrodes and the signal patterns of the bare chips are connected to by conductive plates. An insulating member is provided on connecting portions of the conductive plates.

The invention relates to a chip arrangement (10) and to a method for forming a contact connection (11) between a chip (18), in particular a power transistor or the like, and a conductor material track (14), the conductor material track being formed on a non-conductive substrate (12), the chip being arranged on the substrate or on a conductor material track (15), a silver paste (29) or a copper paste being applied to each of a chip contact surface (25) of the chip and the conductor material track (28), a contact conductor (30) being immersed into the silver paste or the copper paste on the chip contact surface and into the silver paste or the copper paste on the conductor material track, a solvent contained in the silver paste or the copper paste being at least partially vaporized by heating and the contact connection being formed by sintering the silver paste or the copper paste by means of laser energy.

According to an aspect, a power electronic module includes a substrate, a semiconductor die coupled to the substrate, and a clip member configured to secure the semiconductor die to the substrate, where the clip member includes a base portion having a surface coupled to the semiconductor die, an extender portion that extends from the base portion, where the extender portion includes a contact portion coupled to the substrate, and at least one protrusion that extends from the base portion or the extender portion.

According to an aspect, a power electronic module includes a substrate, a semiconductor die coupled to the substrate, and a clip member configured to secure the semiconductor die to the substrate, where the clip member includes a base portion having a surface coupled to the semiconductor die, an extender portion that extends from the base portion, where the extender portion includes a contact portion coupled to the substrate, and at least one protrusion that extends from the base portion or the extender portion.