A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

Power module includes: first transistors Q1, Q4 forming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM1, QM4 of which drains are respectively connected to gates G1 and G4 sides of the first transistors, and sources are respectively connected to the sources S1, S4 sides thereof; source signal wiring patterns SSP1, SSP4 respectively connected to the sources S1, S4 of the first transistors; first connected conductors MSW1, MSW4 for respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP1, MGP4 respectively connected to gates MG1, MG4 of the second transistors; and second connected conductors MGW1, MGW4 for respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.

Power module includes: first transistors Q1, Q4 forming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM1, QM4 of which drains are respectively connected to gates G1 and G4 sides of the first transistors, and sources are respectively connected to the sources S1, S4 sides thereof; source signal wiring patterns SSP1, SSP4 respectively connected to the sources S1, S4 of the first transistors; first connected conductors MSW1, MSW4 for respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP1, MGP4 respectively connected to gates MG1, MG4 of the second transistors; and second connected conductors MGW1, MGW4 for respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.

In one embodiment, a method can include coupling a gate and a source of a first die to a lead frame. The first die can include the gate and the source that are located on a first surface of the first die and a drain that is located on a second surface of the first die that is opposite the first surface. In addition, the method can include coupling a source of a second die to the drain of the first die. The second die can include a gate and the source that are located on a first surface of the second die and a drain that is located on a second surface of the second die that is opposite the first surface.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.