A stackable microelectronic package includes a first microelectronic die attached to and electrically connecting with a first substrate. A second microelectronic die is attached to the first die on one side, and to a second substrate on the other side. Electrical connections are made between the first die and the first substrate, between the second die and the second substrate, and between the first and second substrates, e.g., via wire bonding. The electrical connecting elements are advantageously encased in a molding compound. Exposed contacts on the first and/or second substrates, not covered by the molding compound, provide for electrical connections between the package, and another package stacked onto the package. The package may avoid coplanarity factors, can be manufactured using existing equipment, allows for intermediate testing, and can also offer a thinner package height.

The assembly of a chip (101) attached to a substrate (103) with wires (201) spanning from the chip to the substrate is loaded in a heated cavity (402) of a mold; the wire surfaces are coated with an adsorbed layer of molecules of a heterocyclic compound (302); a pressure chamber (404) of the mold is loaded with a solid pellet (410) of a packaging material including a polymerizable resin, the chamber being connected to the cavity; the vapor of resin molecules is allowed to spread from the chamber to the assembly inside the cavity during the time interval needed to heat the solid pellet for rendering it semi-liquid and to pressurize it through runners (403) before filling the mold cavity, whereby the resin molecules arriving in the cavity are cross-linked by the adsorbed heterocyclic compound molecules into an electrically insulating at least one monolayer of polymeric structures on the wire surfaces.

A stackable microelectronic package includes a first microelectronic die attached to and electrically connecting with a first substrate. A second microelectronic die is attached to the first die on one side, and to a second substrate on the other side. Electrical connections are made between the first die and the first substrate, between the second die and the second substrate, and between the first and second substrates, e.g., via wire bonding. The electrical connecting elements are advantageously encased in a molding compound. Exposed contacts on the first and/or second substrates, not covered by the molding compound, provide for electrical connections between the package, and another package stacked onto the package. The package may avoid coplanarity factors, can be manufactured using existing equipment, allows for intermediate testing, and can also offer a thinner package height.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

An electrically conductive lead is formed using a bonding tool. After bonding the wire to a metal surface and extending a length of the wire beyond the bonding tool, the wire is clamped. Movement of the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool. A forming element, e.g., an edge or a blade skirt provided at an exterior surface of the bonding tool can help kink the wire. Optionally, twisting the wire while tensioning the wire using the bonding tool can cause the wire to break and define an end. The lead then extends from the metal surface to the end, and may exhibit a sign of the torsional force applied thereto.

A method of manufacturing a bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings, and manufacturing a die package with at least one bond wire according to the invention.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.