A semiconductor device includes a printed circuit board having a plurality of first electrode pads on a first main surface and a plurality of second electrode pads electrically connected to at least one of the plurality of first electrode pads on a second main surface, a first chip disposed on the first main surface and having a non-volatile memory; a second chip having a third electrode pad and a control circuit configured to control an operation of the non-volatile memory, a dummy chip having a component that has a higher thermal conductivity than a substrate of the second chip, and a sealing member sealing the first, second, and dummy chips. The third electrode pad is connected to the component of the dummy chip via a first wiring, and the component of the dummy chip is connected to one of the plurality of first electrode pads via a second wiring.

A semiconductor device includes a printed circuit board having a plurality of first electrode pads on a first main surface and a plurality of second electrode pads electrically connected to at least one of the plurality of first electrode pads on a second main surface, a first chip disposed on the first main surface and having a non-volatile memory; a second chip having a third electrode pad and a control circuit configured to control an operation of the non-volatile memory, a dummy chip having a component that has a higher thermal conductivity than a substrate of the second chip, and a sealing member sealing the first, second, and dummy chips. The third electrode pad is connected to the component of the dummy chip via a first wiring, and the component of the dummy chip is connected to one of the plurality of first electrode pads via a second wiring.

A semiconductor device, includes: a semiconductor element having element main surface and element back surface spaced apart from each other in thickness direction and including a plurality of main surface electrodes arranged on the element main surface; a die pad having a die pad main surface where the semiconductor element is mounted; a plurality of leads including at least one first lead arranged on one side in first direction orthogonal to the thickness direction with respect to the die pad, and arranged around the die pad when viewed in the thickness direction; a plurality of connecting members including a first connecting member bonded to the at least one first lead, and configured to electrically connect the main surface electrodes and the leads; and a resin member configured to seal the semiconductor element, a part of the die pad, parts of the leads, and the connecting members

A radio frequency transceiver integrated circuit front end chip and package with integrated harmonic filter is designed to present a 50 Ohm impedance to the integrated circuit. The harmonic filter is connected to the antenna with a bond wire inside the package. The device provides reduced size and cost associated with transceiver circuits that are fabricated in CMOS technology and applied as standalone devices.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

The present disclosure relates to an imaging element package, a method of manufacturing the same, and an electronic device capable of further improving reliability. An imaging element package includes a solid-state imaging element having a first pad, a substrate on which the solid-state imaging element is mounted, the substrate having a second pad, and a wire wiring that connects the first pad and the second pad. The wire wiring has a ball portion bonded to the first pad in a shape having a thickness equal to or larger than a depth of an opening portion provided for opening the first pad, and a crescent portion provided by pressing an end of the metal wire against the ball portion and bonding the end to the ball portion, and connected to the metal wire with a connection length of a predetermined ratio or more with respect to the metal wire.

According to one embodiment, a semiconductor device includes a base, a first circuit board provided on the base, a second circuit board provided on the base at a certain interval from the first circuit board, a first connector provided with a first wire that is bridged between an upper surface of the first circuit board and an upper surface of the second circuit board to connect the two boards, and a first ferrite arranged on the base and directly below the first wire between the first circuit board and the second circuit board.

The present disclosure relates to a semiconductor package including a first semiconductor chip having a first surface on which first connection pads are disposed, and a second surface on which second connection pads are disposed, and including through-vias connected to the second connection pads; a connection structure disposed on the first surface and including a first redistribution layer; a first redistribution disposed on the second surface; and a second semiconductor chip disposed on the connection structure. The first connection pads are connected to a signal pattern of the first redistribution layer, and the second connection pads are connected to at least one of a power pattern and a ground pattern of the second redistribution layer.

In some examples, a device includes a semiconductor element, a layer element, and a single connector element electrically connecting the semiconductor element and the layer element. In some examples, the single connector element includes two or more discrete connector elements, and each discrete connector element of the two or more discrete connector elements electrically connects the semiconductor element and the layer element. In some examples, the single connector element also includes conductive material attached to the two or more discrete connector elements.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.