A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.

A method of improving electrical interconnections between two electrical is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.

A semiconductor package may include: a chip stack including first to N.sup.th semiconductor chips having first to N.sup.th chip pads formed in active surfaces thereof, respectively, and sequentially stacked in a vertical direction such that the first to N.sup.th chip pads are exposed, wherein N is a natural number equal to or more than 2; first to N.sup.th vertical wires having first ends connected to the first to N.sup.th chip pads, respectively, and extended in the vertical direction; a coating layer surrounding portions of the first to k.sup.th vertical wires, extended from the first ends, among the first to N.sup.th vertical wires, and connection portions between the first ends of the first to k.sup.th vertical wires and the first to k.sup.th chip pads; and a molding layer covering the chip stack, surrounding the vertical wires, and covering the coating layer.

A semiconductor package may include: a chip stack including first to N.sup.th semiconductor chips having first to N.sup.th chip pads formed in active surfaces thereof, respectively, and sequentially stacked in a vertical direction such that the first to N.sup.th chip pads are exposed, wherein N is a natural number equal to or more than 2; first to N.sup.th vertical wires having first ends connected to the first to N.sup.th chip pads, respectively, and extended in the vertical direction; a coating layer surrounding portions of the first to k.sup.th vertical wires, extended from the first ends, among the first to N.sup.th vertical wires, and connection portions between the first ends of the first to k.sup.th vertical wires and the first to k.sup.th chip pads; and a molding layer covering the chip stack, surrounding the vertical wires, and covering the coating layer.

[Problem] To provide an electrode connection structure and the like in which a plurality of elongated leads are arranged in parallel and a longitudinal side surface of each lead is connected to an electrode by plating treatment with high quality. [Solution] An electrode connection structure in which a semiconductor chip 12 electrode and/or a substrate electrode is connected to a plurality of elongated leads 11 of a lead frame 10 by plating. The plurality of elongated leads 11 of the lead frame 10 are arranged in parallel, and a longitudinal side surface of each lead 11 is connected to the semiconductor chip 12 electrode and/or the substrate electrode by plating. At a connection portion of a first connection surface 13 of the semiconductor chip 12 electrode and/or the substrate electrode, the first connection surface 13 being connected to the leads 11, and a second connection surface 14 in the longitudinal side surface of each lead 11, the second connection surface 14 being connected to the first connection surface 13, a distance between the first connection surface 13 and the second connection surface 14 continuously increases from an edge portion 15 of the second connection surface 14, the edge portion 15 being in contact with the first connection surface 13, toward an outer portion 16 of the second connection surface 14.

A new method, system and apparatus for mounting mechanically, thermally and electrically light emitting diode (LED), crystals, arrays or packages. The above provides an LED assembly having reduced number of components and costs, superior heat dissipation, mechanical properties and a compact structure. The use of a grid or mesh allows for more efficient and inexpensive removal of heat from one or more LEDs within an LED fixture.

A method of improving electrical interconnections between two electrical elements is made available by providing a meta-material overlay in conjunction with the electrical interconnection. The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta-material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.

Wirebond bondpads on semiconductor packages that result in reduced cross-talk and/or interference between vertical wires are disclosed. The vertical wirebonds may be disposed in the semiconductor package with stacked dies, where the wires are substantially normal to the bondpads to which the vertical wirebonds are attached on the dies. The wirebond bondpads may include signal pads that carry input/output (I/O) to/from the die package, as well as ground bondpads. The bondpads may have widths that are greater than the space between adjacent bondpads. Bondpads may be fabricated to be larger than the size requirements for reliable wirebond formation on the bondpads. For a fixed pitch bondpad configuration, the size of the signal bondpads adjacent to the ground bondpads may be greater than half of the pitch. By increasing the size of the signal bondpads adjacent to a ground line relative to the space therebetween, improved cross-talk performance may be achieved.

A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

An electronic component includes one or more circuits having electrical connections coupled therewith. The electrical connections include a lead frame as well as electrical wires coupling the circuit or circuits to respective portions of the lead frame. The electrical wires may be formed as one piece with the respective portion of the lead frame without joints therebetween, e.g., by 3D printing.