In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.

Damping structures in integrated circuit (IC) devices, and techniques for forming the structures are discussed. An IC device includes, between an IC package and a socket, both a spring force and a damping structure adjacent an array of pins and corresponding lands. The damping structure may be of a dissipative, viscous, or viscoelastic material. The damping structure may be between the IC package and socket. The damping structure may be within a periphery of the socket. The damping structure may be coupled to the IC package or the socket by an adhesive or a press fit. A heatsink or a heat spreader may be coupled to the IC package over the socket.

In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.