A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

A bonding apparatus includes a stage on which a substrate is seated, a gantry installed above the stage, a bonding unit configured to bond a chip to the substrate while moving along the gantry, and a control part moving the bonding unit to align the bonding unit with a bonding position on the substrate, controlling the bonding unit to allow the bonding unit to bond the chip at the bonding position, determining a movement distance of the bonding unit based on a weighted sum of a number of continuous operations and an idle time of the bonding unit.

A substrate positioning apparatus includes a holder and a rotating device. The holder is configured to hold a substrate. The rotating device is configured to rotate the holder. The rotating device includes a rotation shaft, a bearing member, a base member, a driving unit and a damping device. The rotation shaft is fixed to the holder. The bearing member is configured to support the rotation shaft in a non-contact state. The bearing member is fixed on the base member. The driving unit is configured to rotate the rotation shaft. The damping device includes a rail connected to the base member and a slider connected to the rotation shaft, and is configured to produce a damping force against a relative operation between the rotation shaft and the base member by a resistance generated between the rail and the slider.

A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

A component mounting system for mounting a component on a substrate, the mounting system comprising a component supplying unit configured to supply the component; a substrate holding unit configured to hold the substrate in an orientation such that a mounting face for mounting the component on the substrate is facing vertically downward; a head configured to hold the component from vertically below; and a head drive unit that, by causing vertically upward movement of the head holding the component, causes the head to approach the substrate holding unit to mount the component on the mounting face of the substrate.

The invention relates to a method for producing a solder connection between a plurality of components (12A, 12B) in a process chamber (74) sealed off from its surroundings by heating and melting solder material (16) which is arranged between the components (12A, 12B) to be connected. It is proposed that the components (12A, 12B) to be connected are provisionally connected with a bonding material (18) to form a solder group (10) in which the components (12A, 12B) are fixed relative to one another in a joining position.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A dipping apparatus includes a squeegee device and a plate for forming a flux film out of flux. A surface of the plate has a rough surface with a nano-level arithmetically average roughness. The dipping apparatus is configured in such a way that the squeegee device and the plate are moved relatively to each other, and the flux is fed from the squeegee device to the rough surface of the plate.

Disclosed are a die bonding apparatus, a substrate bonding apparatus, a die bonding method, and a substrate bonding method that are capable of bonding a die to a substrate or bonding substrates together without using a bonding medium such as an adhesion film and a solder bump. The die bonding method includes hydrophilizing a bonding surface of the die, by plasma processing, forming a liquid film on a bonding area of the substrate, by supplying a liquid including water to the bonding area of the substrate, pre-bonding the die to the substrate by bringing the die into contact with the liquid film, and post-bonding one or more dies to the substrate at the same time, by performing heat treatment in a state in which the one or more dies are pre-bonded to the substrate.

According to an embodiment, a temperature of an inside of a furnace is set to fall within a range of a reduction temperature or more of a carboxylic acid and less than a melting temperature of a solder bump, and the inside is concurrently set to have a first carboxylic acid gas concentration. Thereafter, the temperature of the inside is raised up to the melting temperature, and the inside is concurrently set to have a second carboxylic acid gas concentration. The second carboxylic acid gas concentration is lower than the first carboxylic acid gas concentration, and is a concentration containing a minimum amount of carboxylic acid gas defined to achieve reduction on an oxide film of the solder bump. The inside has the second carboxylic acid gas concentration at least at a time when the temperature of the inside reaches the melting temperature.