The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

Provided is a multi-beam laser debonding apparatus for debonding an electronic component from a substrate, the apparatus including: a first laser module to emit a first laser beam to a predetermined range of a first substrate area including attachment positions of a debonding target electronic component and a neighboring electronic component to thereby heat a solder of the electronic components to reach a predetermined pre-heat temperature; and a second laser module to emit a second laser beam overlapping the first laser beam to a second substrate area smaller than the first substrate area, the second substrate area including the attachment position of the debonding target electronic component to thereby heat the solder of the debonding target electronic component to reach a debonding temperature at which the solder commences melting.

A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

An apparatus includes a product substrate having a transfer surface, and a semiconductor die defined, at least in part, by a first surface adjoined to a second surface that extends in a direction transverse to the first surface. The transfer surface includes ripples in a profile thereof such that an apex on an individual ripple is a point on a first plane and a trough on the individual ripple is a point on a second plane. The semiconductor die is disposed on the transfer surface between the first plane and the second plane such that the second surface of the semiconductor die extends transverse to the first plane and the second plane.

A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.