A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

Die stacks and methods of making die stacks with very thin dies are disclosed. The die surfaces remain flat within a 5 micron tolerance despite the thinness of the die and the process steps of making the die stack. A residual flux height is kept below 50% of the spacing distance between adjacent surfaces or structures, e.g. in the inter-die spacing.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

According to an embodiment, a temperature of an inside of a furnace is set to fall within a range of a reduction temperature or more of a carboxylic acid and less than a melting temperature of a solder bump, and the inside is concurrently set to have a first carboxylic acid gas concentration. Thereafter, the temperature of the inside is raised up to the melting temperature, and the inside is concurrently set to have a second carboxylic acid gas concentration. The second carboxylic acid gas concentration is lower than the first carboxylic acid gas concentration, and is a concentration containing a minimum amount of carboxylic acid gas defined to achieve reduction on an oxide film of the solder bump. The inside has the second carboxylic acid gas concentration at least at a time when the temperature of the inside reaches the melting temperature.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

In a method of manufacturing a semiconductor package, information with respect to a downward warpage of a reference package substrate, which may be bent with respect to a long axis and/or a short axis of the reference package substrate in applying heat to the reference package substrate to which a plurality of semiconductor chips may be attached using a die attach film (DAF), may be obtained. A package substrate, which may include a first surface to which the semiconductor chips may be attached using the DAF and a second surface opposite to the first surface, may be rotated with respect to the long axis or the short axis at an angle selected based on the information. The heat may be applied to the package substrate to cure the DAF and correct a warpage of the package substrate. Thus, warpage of the package substrate may be corrected for.

A method for producing a semiconductor package includes providing a lead frame and a bond pad with a space therebetween. The frame is provided with a die bonded thereon and a die pad. The die, the pad, a part of the frame, a part of the bond pad and the space between the frame and the bond pad are encapsulated. Part of the first encapsulation is removed to create a cavity having a bottom surface including an exposed surface of the die, an exposed surface of the pad, an exposed surface of the bond pad and a connecting region between the exposed surface of the pad and the bond pad. The cavity is partly filled with an electrically conductive paste. The electrically conductive paste is cured to obtain an interconnect between the die pad and the bond pad. The interconnect is encapsulated.