A bonding device for bonding an electronic element includes an engaging component. The engaging component has a first surface and a second surface opposite to the first surface. The engaging component includes a plurality of recesses at the second surface. The plurality of recesses are configured to cover a plurality of projections of an electronic element. The engaging component is coupled to a heating component.

An apparatus comprising a bonding nozzle that has one or more channels in a bonding surface. The one or more channels comprise a first channel portion in an inner region of the bonding surface and a second channel portion along an outer periphery of the bonding surface. The one or more channels are in fluid communication with a vacuum port. A vacuum relief conduit within the bonding nozzle comprises a first opening into the second channel portion along the outer periphery of the bonding surface, and a second opening along an exterior wall of the bonding nozzle.

A bonding apparatus for bonding a driving circuit to a display panel includes: a bonding stage unit on which the display panel is supported in bonding the driving circuit to the display panel; a head unit located above the bonding stage unit and with which ultrasonic waves are applied to the driving circuit to couple the driving circuit with a bonding area of the display panel supported on the bonding stage unit; and a protrusion disposed at an edge portion of the bonding stage unit, the edge portion corresponding to an end of the display panel at which the bonding area is disposed.

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

A method for transferring a plurality of die operatively associated with a transfer apparatus to a glass substrate to form a circuit component. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

A conveying unit for conveying a device chip onto a predetermined electrode of a board has a chip chuck that holds under suction one surface of the device chip, a support base to which the chip chuck is fixed in an inclinable manner, and a moving unit that moves the support base, in which a fixing mechanism that fixes the chip chuck to the support base has a plurality of leaf springs extending laterally radially from the chip chuck, the plurality of leaf springs are connected to the support base in the surroundings of the chip chuck, and the plurality of leaf springs are pulled one another, so that the chip chuck is supported in air in an inclinable manner.

A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.

Embodiments in accordance with the present inventive concept disclose a chip bonding apparatus that includes a stage configured to support a substrate and a heater that is disposed above the stage. The heater includes a heat generating portion and a body portion. The chip bonding apparatus further includes a bonding tool assembly fixing unit having a first portion connected to the body portion of the heater, and a second portion configured to receive the heat generating portion. The chip bonding apparatus further includes a first bonding tool connected to the heat generating portion; and a first bonding tool fixing unit having a third portion that is connected to the first portion, and a fourth portion configured to receive the first bonding tool. The bonding tool fixing unit may be attached by an electrostatic force or by coupling between a notch gripper and a corresponding notch.