A bonding apparatus for bonding a driving circuit to a display panel includes: a bonding stage unit on which the display panel is supported in bonding the driving circuit to the display panel; a head unit located above the bonding stage unit and with which ultrasonic waves are applied to the driving circuit to couple the driving circuit with a bonding area of the display panel supported on the bonding stage unit; and a protrusion disposed at an edge portion of the bonding stage unit, the edge portion corresponding to an end of the display panel at which the bonding area is disposed.

An apparatus includes a product substrate having a transfer surface, and a semiconductor die defined, at least in part, by a first surface adjoined to a second surface that extends in a direction transverse to the first surface. The transfer surface includes ripples in a profile thereof such that an apex on an individual ripple is a point on a first plane and a trough on the individual ripple is a point on a second plane. The semiconductor die is disposed on the transfer surface between the first plane and the second plane such that the second surface of the semiconductor die extends transverse to the first plane and the second plane.

A bonding apparatus includes an ultrasonic oscillator which generates ultrasonic vibration, a stage disposed under the ultrasonic oscillator, and an embossed sheet disposed between the ultrasonic oscillator and the stage. The embossed sheet includes a body and a plurality of protrusions protruding downward from a lower surface of the body which faces the stage.

A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

A bonding and indexing method is provided, having a first index head to move a substrate in an indexing direction from a first position to a second position; a second index head to move the substrate in an indexing direction from the second position to a third position; and the first and/or second index head has a bonding element to effect a bonding process between the substrate and an element disposed against the substrate so that bonding and movement in the indexing direction is implemented simultaneously by the first index head and/or bonding and movement in the indexing direction is implemented simultaneously by the second index head.

A bonding and indexing apparatus has a first index head to move a substrate in an indexing direction from a first position to a second position and a second index head to move the substrate in an indexing direction from the second position to a third position. The first and/or second index head has a bonding element to effect a bonding process between the substrate and an element disposed against the substrate so that bonding and movement in the indexing direction is implemented simultaneously by the first index head and/or bonding and movement in the indexing direction is implemented simultaneously by the second index head.

A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.