To allow short time spreading for adhesive, verifying whether the adhesive is spread out to a member end. In obtaining a bonded member by applying the adhesive to a surface of one of two members and bonding the members with a member bonding device, a tilt adjusting device acquires with a camera an image of spreading state of the adhesive in the members' bonding surface, and adjusts the tilt of the bonded member when a non-spreading part of the adhesive between ends of the bonded member and the adhesive has a size bias so that the adhesive moves to the larger side of the part, and a spreading adjustment device controls a pushing amount and a pushing time interval of a pressing-side member to adjust spreading of the adhesive so that the part size reduces to a predetermined size depending on the part size acquired with the camera, and cures the adhesive in the bonded member edge with the non-spreading part eliminated.

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

There is provided a bonding method capable of accurately positioning a bonding stage. According to an aspect of the present invention, a bonding method using a bonding apparatus including a rotation drive mechanism for rotating a bonding stage 1 about a -axis includes the steps of: (e) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a certain area of a substrate held on the bonding stage; (f) unlocking the bonding stage with respect to the -axis, and rotating the bonding stage about the -axis with the rotation drive mechanism; and (g) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a remaining region of the substrate.

A solder reflow apparatus may include a reflow chamber, a heater and a stage. The reflow chamber may be configured to receive a heat transfer fluid. The heat transfer fluid may be configured for transferring heat to a solder for mounting an electronic part on a substrate. The heater may be configured to heat the heat transfer fluid in the reflow chamber. The stage may be in the reflow chamber to support the substrate. The stage may be inclined to a bottom surface of the reflow chamber to induce the heat transfer fluid toward a central portion of the substrate. Thus, the vertically ascended heat transfer fluid may be uniformly applied to the central portion and an edge portion of the substrate so that the solders at the central portion and the edge portion of the substrate may be uniformly soldered.

A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

There is provided a bonding method capable of accurately positioning a bonding stage. According to an aspect of the present invention, a bonding method using a bonding apparatus including a rotation drive mechanism for rotating a bonding stage 1 about a -axis includes the steps of: (e) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a certain area of a substrate held on the bonding stage; (f) unlocking the bonding stage with respect to the -axis, and rotating the bonding stage about the -axis with the rotation drive mechanism; and (g) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a remaining region of the substrate.

A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

A bonding method for bonding a semiconductor chip to an underlying structure includes aligning an electrical contact of a lower surface of the semiconductor chip with an electrical connection member of an upper surface of the underlying structure, the electrical contact at least partially encased by a support material. The method further includes first heating the semiconductor chip and the underlying structure, deforming the electrical contact, and curing the support material encasing the deformed electrical contact. The method still further includes second heating the semiconductor chip and the underlying structure to bond the electrical contact of the semiconductor chip to the electrical connection member of the underlying structure while maintaining the support material in a cured state.