The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

In one example, a system comprises a laser assisted bonding (LAB) tool. The LAB tool comprises a stage block and a first lateral laser source facing the stage block from a lateral side of the stage block. The stage block is configured to support a substrate and a first electronic component coupled with the substrate, and the first electronic component comprises a first interconnect. The first lateral laser source is configured to emit a first lateral laser beam laterally toward the stage block to induce a first heat on the first interconnect to bond the first interconnect with the substrate. Other examples and related methods are also disclosed herein.

A method for manufacturing a semiconductor device of an embodiment, comprises a step of mounting a first semiconductor element on a board and a step of accommodating a member in which a plate-shaped member and a first adhesive layer are stacked in a collet and pressure-bonding the heated first adhesive layer on the board on which the first semiconductor element is mounted. The collet has a member having the first Young's modulus and a second member having a second Young's modulus which is lower than the first Young's modulus on a surface that accommodates the member in which the plate-shaped member and the first adhesive layer are stacked.

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

A bonding apparatus comprises a chip holding part that disposes a chip part onto a substrate that has been placed on a substrate stage. The bonding apparatus adjusts the inclination of a chip holding surface that releasably holds the chip part. The bonding apparatus comprises: an adjustment controller which stores inclination information pertaining to inclination respectively for locations on a stage main surface having the substrate placed thereon; and a conforming jig which has a conforming surface onto which the chip holding surface is pressed, and in which the inclination of the conforming surface can be changed such that the inclination of the chip holding surface corresponds to the inclination indicated by the inclination information.

Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).

In one example, a system can comprise a laser assisted bonding (LAB) tool comprising a stage block and a laser source facing the stage block. The stage block can be configured to support a first substrate and a first electronic component coupled with the first substrate, the first electronic component comprising a first interconnect. The laser source can be configured to emit a first laser towards the stage block to induce a first heat on the first interconnect to bond the first interconnect with the first substrate. Other examples and related methods are also disclosed herein.

Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.

Microelectronic die package structures formed according to some embodiments may include a thermal compression bonding (TCB) assembly including a bond head with a first thermal zone separated from a second thermal zone by a thermal separator, the thermal separator extending through a thickness of the bond head. A bond head nozzle is coupled to a first side of the bond head, where the bond head nozzle includes one or more nozzle channels extending through a thickness of the bond head nozzle.

This chip mounting system simultaneously images an alignment mark disposed on a substrate (WT) and an alignment mark disposed on a chip (CP), with the alignment marks disposed on the substrate (WT) and the chip (CP) being separated by a first distance at which the alignment marks fall within a depth-of-field range of imaging devices (35a, 35b). The chip mounting system calculates a relative positional deviation amount between the substrate (WT) and the chip (CP) from the imaged images of the alignment marks imaged by the imaging devices (35a, 35b) and, based on the calculated positional deviation amount, relatively moves the chip (CP) with respect to the substrate (WT) in a direction in which the positional deviation amount therebetween decreases.