A semiconductor package includes a plurality of stack modules which are vertically stacked. Each of the stack modules includes an interposing bridge, a semiconductor dies, and redistribution lines. The stack modules are provided by rotating each of the stack modules by different rotation angles corresponding to multiples of a reference angle and by vertically stacking the rotated stack modules. The interposing bridge includes a plurality of sets of through vias, and each set of through vias includes through vias arrayed in a plurality of columns. The plurality of sets of through vias are disposed in respective ones of divided regions of the interposing bridge. If the plurality of sets of through vias are rotated by the reference angle, then the rotated through vias overlap with the plurality of sets of through vias which are originally located. The redistribution lines connect the semiconductor dies to the plurality of sets of through vias.

A semiconductor package includes a plurality of stack modules which are vertically stacked. Each of the stack modules includes an interposing bridge, a semiconductor dies, and redistribution lines. The stack modules are provided by rotating each of the stack modules by different rotation angles corresponding to multiples of a reference angle and by vertically stacking the rotated stack modules. The interposing bridge includes a plurality of sets of through vias, and each set of through vias includes through vias arrayed in a plurality of columns. The plurality of sets of through vias are disposed in respective ones of divided regions of the interposing bridge. If the plurality of sets of through vias are rotated by the reference angle, then the rotated through vias overlap with the plurality of sets of through vias which are originally located. The redistribution lines connect the semiconductor dies to the plurality of sets of through vias.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.