A wire bonding apparatus includes: a first tensioner which forms, nearer a wire supply side than a bonding tool, a first gas flow for applying a tension toward the wire supply side on a wire; a second tensioner which forms, between the first tensioner and a pressing part of the bonding tool, a second gas flow for applying a tension toward the wire supply side on the wire; and a control part which controls the first tensioner and the second tensioner. The control part implements control, in a predetermined period after a first bonding step for bonding the wire to a first bonding point, to turn off at least the second gas flow of the second tensioner among the first tensioner and the second tensioner or to make at least the second gas flow smaller than in the first bonding step.

A wire bonding apparatus includes: a first tensioner which forms, nearer a wire supply side than a bonding tool, a first gas flow for applying a tension toward the wire supply side on a wire; a second tensioner which forms, between the first tensioner and a pressing part of the bonding tool, a second gas flow for applying a tension toward the wire supply side on the wire; and a control part which controls the first tensioner and the second tensioner. The control part implements control, in a predetermined period after a first bonding step for bonding the wire to a first bonding point, to turn off at least the second gas flow of the second tensioner among the first tensioner and the second tensioner or to make at least the second gas flow smaller than in the first bonding step.

An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.

An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.