The present invention includes: a heat plate for heating a lower side of a substrate sliding on an upper surface; and a heat block for heating the heat plate. The heat block includes an air heating flow path for heating air which flows in from a bottom surface side and causing the air to flow out to the heat plate side, the heat plate includes air holes for discharging the air heated by the air heating flow path from the upper surface, the heated air discharged from the air holes forms a heated air atmosphere above the heat plate, and the substrate is transported through the heat air atmosphere. Thereby, curved deformation of the substrate is suppressed.

Bonding processing for a plurality of bonding points of different distances with respect to a reference position (origin) of an object to be bonded without changing a moving distance of bonding means is provided. The bonding means, a bonding stage having a work-holder and a rotary mechanism unit for rotating the work-holder, and a control unit for controlling rotation of the work-holder are provided. The bonding means is movable relative to a placement surface of the work-holder in a reference orientation and has a reference position on its moving direction. The plurality of bonding points include bonding points of different separation distances from the reference position along the moving direction while the object to be bonded is being held to the work-holder in the reference orientation. The control unit corrects differences in the separation distances of the plurality of bonding points by controlling rotation of the work-holder.

A semiconductor package includes a metallic pad and leads, a semiconductor die attached to the metallic pad, the semiconductor die including an active side with bond pads opposite the metallic pad, a wire bond extending from a respective bond pad of the semiconductor die to a respective lead of the leads, a heat spreader over the active side of the semiconductor die with a gap separating the active side of the semiconductor die from the heat spreader, an electrically insulating material within the gap and in contact with the active side of the semiconductor die and the heat spreader; and mold compound covering the semiconductor die and the wire bond, and partially covering the metallic pad and the heat spreader, with the metallic pad exposed on a first outer surface of the semiconductor package and with the heat spreader exposed on a second outer surface of the semiconductor package.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Bonding processing for a plurality of bonding points of different distances with respect to a reference position (origin) of an object to be bonded without changing a moving distance of bonding means is provided. The bonding means, a bonding stage having a work-holder and a rotary mechanism unit for rotating the work-holder, and a control unit for controlling rotation of the work-holder are provided. The bonding means is movable relative to a placement surface of the work-holder in a reference orientation and has a reference position on its moving direction. The plurality of bonding points include bonding points of different separation distances from the reference position along the moving direction while the object to be bonded is being held to the work-holder in the reference orientation. The control unit corrects differences in the separation distances of the plurality of bonding points by controlling rotation of the work-holder.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A semiconductor package includes a metallic pad and leads, a semiconductor die attached to the metallic pad, the semiconductor die including an active side with bond pads opposite the metallic pad, a wire bond extending from a respective bond pad of the semiconductor die to a respective lead of the leads, a heat spreader over the active side of the semiconductor die with a gap separating the active side of the semiconductor die from the heat spreader, an electrically insulating material within the gap and in contact with the active side of the semiconductor die and the heat spreader; and mold compound covering the semiconductor die and the wire bond, and partially covering the metallic pad and the heat spreader, with the metallic pad exposed on a first outer surface of the semiconductor package and with the heat spreader exposed on a second outer surface of the semiconductor package.

The present invention includes: a heat plate for heating a lower side of a substrate sliding on an upper surface; and a heat block for heating the heat plate. The heat block includes an air heating flow path for heating air which flows in from a bottom surface side and causing the air to flow out to the heat plate side, the heat plate includes air holes for discharging the air heated by the air heating flow path from the upper surface, the heated air discharged from the air holes forms a heated air atmosphere above the heat plate, and the substrate is transported through the heat air atmosphere. Thereby, curved deformation of the substrate is suppressed.

The present invention includes: a heat plate for heating a lower side of a substrate sliding on an upper surface; and a heat block for heating the heat plate. The heat block includes an air heating flow path for heating air which flows in from a bottom surface side and causing the air to flow out to the heat plate side, the heat plate includes air holes for discharging the air heated by the air heating flow path from the upper surface, the heated air discharged from the air holes forms a heated air atmosphere above the heat plate, and the substrate is transported through the heat air atmosphere. Thereby, curved deformation of the substrate is suppressed.

A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).