A wire bonding apparatus according to an embodiment bonds a wire to a bonding portion by generating an ultrasonic vibration in a state of pressing the wire onto the bonding portion. The wire bonding apparatus includes a bonding tool that causes the wire to contact the bonding portion and applies a load, an ultrasonic horn that generates the ultrasonic vibration, a load sensor that continuously detects the load applied from the bonding tool to the bonding portion, and a controller that controls the operation of the bonding tool and the ultrasonic horn. The controller analyzes data of the load output from the load sensor between when the wire contacts the bonding portion and when the ultrasonic vibration is generated, and controls the operation of the bonding tool and the ultrasonic horn based on an analysis result.

A wire bonding device for performing a wire bonding process includes: a bonding tool for inserting a wire; an ultrasonic vibrator; a drive mechanism for moving the bonding tool; and a control part. The control part performs: a bonding step of bonding the wire to a bonding point; a tail feeding out step of feeding out a wire tail from the wire bonded to the bonding point; a tension applying step of raising the bonding tool to apply tension to the wire while the wire is clamped; a tension release step of lowering the bonding tool to release the tension applied to the wire; and after performing a series of steps including the tension applying step and the tension release step at least once, a tail cutting step of raising the bonding tool to cut the wire tail from the wire.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of -30° to 30° with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is -30° to 30°.

Provided is a wire bonding state determination device which determines a bonding state between a pad and a wire after the wire is bonded to the pad. The wire bonding state determination device includes: a waveform detector which makes an incident wave incident to the wire, and detects a transmission waveform of the wire and a reflection waveform from a first bonding surface between the pad and the wire; and a bonding determination unit which determines the bonding state between the pad and the wire based on the transmission waveform and the reflection waveform detected by the waveform detector.

A wire bonding apparatus is provided with: a bonding stage on which a semiconductor chip is mounted; a wire bonding unit including a capillary bonding a bonding wire to the semiconductor chip, a Z-axis drive section reciprocating the capillary, and a tool XY-stage causing the capillary and the Z-axis drive section to be moved along a two-dimensional plane intersecting a direction of reciprocation; and a base having an optical system and an optical system XY-stage causing the optical system to be moved along a two-dimensional plane intersecting a direction of reciprocation, the base having the wire bonding unit attached thereto. The wire bonding unit is attached to a first portion of the base, and the optical system XY-stage is attached to a second portion of the base which is separate from the first portion.

A wire structure (50A) includes: a column-like bump (45), provided to be adjacent to a second electronic component (32b) installed on a substrate (31); and a looping wire (50), bonded onto the substrate (31) to stride over the second electronic component (32b). The looping wire (50) includes: a second raised part (54), wherein a tip is bonded to the substrate (31) on a side of the column-like bump (45) opposite to the second electronic component (32b) to be raised from the substrate (31); a loop part (55), extending to stride over the second electronic component (32b); and a bent part (56), bent to be engaged with an upper end of the column-like bump (45) to connect the loop part (55) and the second raised part (54).

A ball forming device includes a first current control circuit to control discharge current arranged between a leading end of a wire and one electrode of a discharge continuing power source for causing discharge current to flow after dielectric breakdown, a second current control circuit to control shunting of discharge current arranged between a discharge electrode and the other electrode of the discharge continuing power source, and a fixed resistor connected to the second current control circuit in parallel as a shunt and controls current flowing through the second current control circuit, thereby a discharge voltage value is adequately changed.

A method of forming a wire loop in connection with a semiconductor package is provided. The method includes the steps of: (1) providing package data related to the semiconductor package to a wire bonding machine; (2) providing at least one looping control value related to a desired wire loop to the wire bonding machine, the at least one looping control value including at least a loop height value related to the desired wire loop; (3) deriving looping parameters, using an algorithm, for forming the desired wire loop; (4) forming a first wire loop on the wire bonding machine using the looping parameters derived in step (3); (5) measuring actual looping control values of the first wire loop formed in step (4) corresponding to the at least one looping control value; and (6) comparing the actual looping control values measured in step (5) to the at least one looping control value provided in step (2).

A method of forming a wire loop in connection with a semiconductor package is provided. The method includes the steps of: (1) providing package data related to the semiconductor package to a wire bonding machine; (2) providing at least one looping control value related to a desired wire loop to the wire bonding machine, the at least one looping control value including at least a loop height value related to the desired wire loop; (3) deriving looping parameters, using an algorithm, for forming the desired wire loop; (4) forming a first wire loop on the wire bonding machine using the looping parameters derived in step (3); (5) measuring actual looping control values of the first wire loop formed in step (4) corresponding to the at least one looping control value; and (6) comparing the actual looping control values measured in step (5) to the at least one looping control value provided in step (2).

Provided is a bonding apparatus including a bonding stage 83 for heating a substrate (lead frame) 61 placed on the upper surface thereof or a semiconductor die 63 mounted on the substrate (lead frame) 61, an imaging device 20 arranged above the bonding stage 83 to image the substrate 61 placed on the bonding stage 83 or the semiconductor die 63 mounted on the substrate 61, and a standing wave generating device 35 for generating an ultrasonic standing wave in the space between the upper surface of the bonding stage 83 and the imaging device 20. This improves the accuracy of image position detection by the imaging device with a simple structure.