A ribbon bonding tool including a body portion is provided. The body portion includes a tip portion. The tip portion includes a working surface between a front edge of the tip portion and a back edge of the tip portion. The working surface includes a region defining at least one of a plurality of recesses and a plurality of protrusions. The working surface also defines at least one of (a) a first planar portion between the region and the front edge of the tip portion, and (b) a second planar portion between the region and the back edge of the tip portion.

A ribbon bonding tool including a body portion is provided. The body portion includes a tip portion. The tip portion includes a working surface between a front edge of the tip portion and a back edge of the tip portion. The working surface includes a region defining at least one of a plurality of recesses and a plurality of protrusions. The working surface also defines at least one of (a) a first planar portion between the region and the front edge of the tip portion, and (b) a second planar portion between the region and the back edge of the tip portion.

A method of operating an ultrasonic bonding machine is provided. The method includes the steps of: (a) imaging at least one of (i) a semiconductor element supported by a substrate, and (ii) a clamping structure adapted for securing the substrate during a bonding operation; and (b) determining if a relative position of the semiconductor element and the clamping structure is acceptable using predetermined criteria and information from step (a).

A method of operating an ultrasonic bonding machine is provided. The method includes the steps of: (a) imaging at least one of (i) a semiconductor element supported by a substrate, and (ii) a clamping structure adapted for securing the substrate during a bonding operation; and (b) determining if a relative position of the semiconductor element and the clamping structure is acceptable using predetermined criteria and information from step (a).

A semiconductor device is provided that can minimize the occurrence of poor joining between a copper electrode and a copper wire. The semiconductor device includes a semiconductor substrate; a copper electrode layer formed on the semiconductor substrate; a metallic thin-film layer formed on the copper electrode layer for preventing oxidation of the copper electrode layer, the metallic thin-film layer having an opening through which the copper electrode layer is exposed, the opening being located on an inner side relative to an outer periphery of the metallic thin-film layer; and an interconnection member containing copper as a main component, the interconnection member including a joining region covering the opening, the interconnection member being joined to the metallic thin-film layer and joined to the copper electrode layer in the opening.

A semiconductor device includes a circuit board including an insulating layer having opposite front and rear surfaces, an electrode pad disposed on the front surface, a housing having an installation area for the circuit board, and a bonding material embedded in a recess within either a first area located at the rear surface of the insulating layer directly below an area of the circuit board in which the electrode pad is disposed, or at a second area located within the installation area of the housing and corresponding to the first area in a plan view.

[Object] A semiconductor device is configured to release heat from semiconductor chips more efficiently. [Means for Solution] A semiconductor device includes: a die pad 11 which has a die pad main surface 111 and a die pad rear surface 112; a semiconductor chip 41 mounted on the die pad main surface 111; a sealing resin portion 7 formed with a recess 75 for exposure of the die pad rear surface 11 and covering the die pad 11 and the semiconductor chip 41; and a heat releasing layer 6 disposed in the recess 75. The recess 75 has a recess groove 753 outside the die pad 11 in a direction in which the die pad rear surface 112 extends, and the recess groove 753 is closer to the die pad main surface 111 than to the die pad rear surface 112. The heat releasing layer 6 has a junction layer which is in contact with the die pad rear surface 112 and having part thereof filling the recess groove 753.

A ribbon bonding tool including a body portion is provided. The body portion includes a tip portion. The tip portion includes a working surface between a front edge of the tip portion and a back edge of the tip portion. The working surface includes a region defining at least one of a plurality of recesses and a plurality of protrusions. The working surface also defines at least one of (a) a first planar portion between the region and the front edge of the tip portion, and (b) a second planar portion between the region and the back edge of the tip portion.

A bonding apparatus according to the present disclosure includes a bonding tool that bonds a wire to a terminal, a guide member that guides the wire, a clamp made of a conductive material and capable of fixing the wire, and an electrical property measurement unit electrically connected to the clamp. The clamp is configured to be electrically connected to the wire when the wire is fixed. After the wire is bonded to the terminal using the bonding tool, the bonding apparatus carries out a tensile test for fixing the wire using the clamp and pulling the wire bonded to the terminal with a predetermined load and an electrical property test for measuring an electrical resistance of a junction between the wire and the terminal using the electrical property measurement unit.

A ribbon bonding tool including a body portion is provided. The body portion includes a tip portion. The tip portion including a working surface, the tip portion including two side wall portions on either side of the working surface wherein a ribbon path is defined between the side wall portions.