Provided is a multi-beam laser debonding apparatus for debonding an electronic component from a substrate, the apparatus including: a first laser module to emit a first laser beam to a predetermined range of a first substrate area including attachment positions of a debonding target electronic component and a neighboring electronic component to thereby heat a solder of the electronic components to reach a predetermined pre-heat temperature; and a second laser module to emit a second laser beam overlapping the first laser beam to a second substrate area smaller than the first substrate area, the second substrate area including the attachment position of the debonding target electronic component to thereby heat the solder of the debonding target electronic component to reach a debonding temperature at which the solder commences melting.

A soldering system that determines soldering quality of elements relative to a housing at the moment of soldering semiconductor laser elements. A soldering device that performs soldering of a semiconductor laser element to a semiconductor laser module, a robot that conveys the module, a camera, and a control device that controls the robot and camera based on imaging output of the camera. The robot conveys the module and changes the position and posture of the camera. The camera images the module. The control device calculates the position of the semiconductor laser element based on the imaging output, calculates parallelism between the housing of the module and the semiconductor laser element based on the change in light intensity related to the imaging output when changing the relative position between the camera and the subject, and determines the quality of soldering of the semiconductor laser element based on the position and parallelism.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

According to one embodiment, a manufacturing apparatus includes: a storage configured to store a work; a transfer arm configured to transfer the work; a hot bath configured to store a liquid; a mounting table configured to mount the work in the hot bath; and an upper arm configured to apply pressure to the work mounted on the mounting table.

A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

According to one embodiment, a manufacturing apparatus includes: a storage configured to store a work; a transfer arm configured to transfer the work; a hot bath configured to store a liquid; a mounting table configured to mount the work in the hot bath; and an upper arm configured to apply pressure to the work mounted on the mounting table.

A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.

Provided is a multi-beam laser debonding apparatus for debonding an electronic component from a substrate, the apparatus including: a first laser module to emit a first laser beam to a predetermined range of a first substrate area including attachment positions of a debonding target electronic component and a neighboring electronic component to thereby heat a solder of the electronic components to reach a predetermined pre-heat temperature; and a second laser module to emit a second laser beam overlapping the first laser beam to a second substrate area smaller than the first substrate area, the second substrate area including the attachment position of the debonding target electronic component to thereby heat the solder of the debonding target electronic component to reach a debonding temperature at which the solder commences melting.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.