A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic bonding structure embedded therein, wherein each metallic bonding structure contains a columnar grain microstructure. Furthermore, at least one columnar grain extends across a bonding interface that is present between the metallic bonding structures. The presence of the columnar grain microstructure in the metallic bonding structures, together with at least one columnar grain microstructure extending across the bonding interface between the two bonded metallic bonding structures, can provide a 3D bonded structure having mechanical bonding strength and electrical performance enhancements.

A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic bonding structure embedded therein, wherein each metallic bonding structure contains a columnar grain microstructure. Furthermore, at least one columnar grain extends across a bonding interface that is present between the metallic bonding structures. The presence of the columnar grain microstructure in the metallic bonding structures, together with at least one columnar grain microstructure extending across the bonding interface between the two bonded metallic bonding structures, can provide a 3D bonded structure having mechanical bonding strength and electrical performance enhancements.

A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic bonding structure embedded therein, wherein each metallic bonding structure contains a columnar grain microstructure. Furthermore, at least one columnar grain extends across a bonding interface that is present between the metallic bonding structures. The presence of the columnar grain microstructure in the metallic bonding structures, together with at least one columnar grain microstructure extending across the bonding interface between the two bonded metallic bonding structures, can provide a 3D bonded structure having mechanical bonding strength and electrical performance enhancements.

A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic bonding structure embedded therein, wherein each metallic bonding structure contains a columnar grain microstructure. Furthermore, at least one columnar grain extends across a bonding interface that is present between the metallic bonding structures. The presence of the columnar grain microstructure in the metallic bonding structures, together with at least one columnar grain microstructure extending across the bonding interface between the two bonded metallic bonding structures, can provide a 3D bonded structure having mechanical bonding strength and electrical performance enhancements.

A bonding device is configured to bond a first element and a second element. The bonding device comprises an activating unit configured to activate a first bonding surface, which is a bonding surface of the first element, and a second bonding surface, which is a bonding surface of the second element, and a bonding unit configured to irradiate an active energy ray to cause the first bonding surface and the second bonding surface to come closer and bond with each other, from a state in which the first bonding surface and the second bonding surface face each other with a prescribed gap therebetween.