In an embodiment, a wafer bonding system includes a chamber, a gas inlet and a gas outlet configured to control a pressure of the chamber to be in a range from 1×10.sup.−2 mbar to 1520 torr, a first wafer chuck having a first surface to support a first wafer, and a second wafer chuck having a second surface to support a second wafer, the second surface being opposite the first surface, the second wafer chuck and the first wafer chuck being movable relative to each other, wherein the second surface that supports the second wafer is divided into zones, wherein a vacuum pressure of each zone is controlled independently of other zones.

A chip bonding apparatus, includes: a body; a substrate conveyor installed on the body to transfer a substrate; a bonding head conveyor disposed on an upper surface of the body; an alignment unit installed on the body and adjusting a position of the substrate and a position of a chip; and a bonding head installed in the bonding head conveyor and moved and attaching a chip therebelow, wherein the bonding head is provided with a chip bonding unit for attaching the chip in a lower end portion thereof, wherein the chip bonding unit, includes: a chip bonding unit body having an installation groove formed therein; a pushing module having one end portion inserted in the installation groove; and an attachment module having a deformable member deformed by the pushing module; wherein the deformable member is provided with a deformable portion which is deformed by being pressed by the pushing module, and having a bottom surface in contact and exerting a force on the chip to bond the chip to the substrate.

A method of producing a bonded chip stack is described. A first nanofluidic device chip having a first through-wafer via is formed. A second nanofluidic device chip having a second through-wafer via is formed. The first nanofluidic device chip and the second nanofluidic device chip are washed with a detergent solution. A first surface of the first nanofluidic device chip and a second surface of the second nanofluidic device chip are activated by treating the first surface and the second surface with an activation solution. The first nanofluidic device chip and the second nanofluidic device chip are arranged in a stack. The first through-wafer via is aligned with the second through-wafer via in a substantially straight line. The stack of first and second nanofluidic device chips is subjected to annealing conditions.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

A method of producing a bonded chip stack is described. A first nanofluidic device chip having a first through-wafer via is formed. A second nanofluidic device chip having a second through-wafer via is formed. The first nanofluidic device chip and the second nanofluidic device chip are washed with a detergent solution. A first surface of the first nanofluidic device chip and a second surface of the second nanofluidic device chip are activated by treating the first surface and the second surface with an activation solution. The first nanofluidic device chip and the second nanofluidic device chip are arranged in a stack. The first through-wafer via is aligned with the second through-wafer via in a substantially straight line. The stack of first and second nanofluidic device chips is subjected to annealing conditions.

A wafer bonding method includes placing a first wafer on a first bonding framework including a plurality of outlet holes around a periphery of the first bonding framework. A second wafer is placed on a second bonding framework that includes a plurality of inlet holes around a periphery of the second bonding framework. The first bonding framework is in overlapping relation to the second bonding framework such that a gap exist between the first wafer and the second wafer. A gas stream is circulated through the gap between the first wafer and the second wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the first wafer and the second wafer.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.

A wafer bonding method includes placing a first wafer on a first bonding framework including a plurality of outlet holes around a periphery of the first bonding framework. A second wafer is placed on a second bonding framework that includes a plurality of inlet holes around a periphery of the second bonding framework. The first bonding framework is in overlapping relation to the second bonding framework such that a gap exist between the first wafer and the second wafer. A gas stream is circulated through the gap between the first wafer and the second wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the first wafer and the second wafer.