A stacked semiconductor device and systems and methods for producing the same are disclosed here. In some embodiments, the method includes aligning a first array of bond pads on an upper surface of a first semiconductor substrate with a second array of bond pads on a lower surface of a second semiconductor substrate. The method then includes annealing the stacked semiconductor device to bond the upper surface of the first semiconductor substrate to the lower surface of the second semiconductor substrate. The annealing results in at least one void between the upper surface and the lower surface that includes a layer of diffused metal. The layer of diffused metal extends from a first individual bond pad towards a second individual bond pad and forms and electrical or thermal short. The method then includes exposing the stacked semiconductor device to microwave radiation to excite a chemical constituent present in the void.

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip, where a first conductive connection wire of the first chip is connected to a first conductive contact pad, a second conductive connection wire of the second chip is connected to a second conductive contact pad, the first conductive contact pad includes a first conductor group and a first connection group, and the second conductive contact pad includes a second conductor group and a second connection group.

A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip. A first conductive connection wire of the first chip is connected to a first conductive contact pad, and a second conductive connection wire of the second chip is connected to a second conductive contact pad. In addition, the first conductive contact pad includes a first conductor and a second conductor, and the second conductive contact pad includes a third conductor and a fourth conductor. The first conductor is directly opposite to the fourth conductor, and the second conductor is directly opposite to the third conductor. Therefore, pre-connection of the first conductive contact pad and the second conductive contact pad may be implemented and then the first chip and second chip that are pre-connected are transferred for bonding.

A semiconductor structure, a method for forming a semiconductor structure, a stacked structure, and a wafer stacking method are provided. The semiconductor structure includes: a semiconductor substrate; a first dielectric layer on a surface of a semiconductor substrate; a top metal layer, in which the top metal layer is located in the first dielectric layer, and the top metal layer penetrates through the first dielectric layer; and a buffer layer located between the top metal layer and the first dielectric layer.

A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a lower surface and side surfaces of the first conductive pad, a second wafer including a second conductive pad in a second insulating layer and a second barrier layer surrounding a lower surface and side surfaces of the second conductive pad, the second insulating layer being bonded to the first insulating layer, and at least a portion of an upper surface of the second conductive pad being partially or entirely bonded to at least a portion of an upper surface of the first conductive pad, and a third barrier layer between portions of the first and second wafers where the first and second conductive pads are not bonded to each other.

According to one embodiment, a memory device includes: a first chip including a first insulating layer and a first pad; a plurality of memory units provided in a first area of the first insulating layer and arranged at first intervals in a first direction parallel to a surface of the first chip; a plurality of mark portions provided in a second area of the first insulating layer and arranged at second intervals in the first direction; a second chip including a second pad connected to the first pad and overlapping the first chip in a second direction perpendicular to the surface of the first chip; and a circuit provided in the second chip.

Embodiments relate to using nanoporous metal tips to establish connections between a first body and a second body. The first body is positioned relative to the second body to align contacts protruding from a first surface of the first body with electrodes protruding from a second surface of the second body. The second surface faces the first surface. The contacts, the electrodes, or both comprise nanoporous metal tips. A relative movement is made between the first body and the second body after positioning the first body to approach the first body to the second body. The contacts and the electrodes are bonded by melting and solidifying the nanoporous metal tips after approaching the first body and the second body.

A stacked semiconductor device and systems and methods for producing the same are disclosed here. In some embodiments, the method includes aligning a first array of bond pads on an upper surface of a first semiconductor substrate with a second array of bond pads on a lower surface of a second semiconductor substrate. The method then includes annealing the stacked semiconductor device to bond the upper surface of the first semiconductor substrate to the lower surface of the second semiconductor substrate. The annealing results in at least one void between the upper surface and the lower surface that includes a layer of diffused metal. The layer of diffused metal extends from a first individual bond pad towards a second individual bond pad and forms an electrical or thermal short. The method then includes exposing the stacked semiconductor device to microwave radiation to excite a chemical constituent present in the void.

An inter-substrate bond structure includes an adhesion layer that attached to a first substrate, and an outer gas-permeable layer coupled to the adhesion layer. The outer gas-permeable layer expands and fractures in response to absorbing a gas. The inter-substrate bond structure includes an outer bond layer coupled to the outer gas-permeable layer. The outer bond layer forms an initial thermocompression bond with a mating layer on a second substrate. The initial thermocompression bond bonds the first substrate to the second substrate with the inter-substrate bond structure. The fracture in the inter-substrate bond structure debonds the first substrate from the second substrate while leaving a first portion of the inter-substrate bond structure attached to the first substrate.