The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

A semiconductor die is provided, comprising a semiconductor substrate, a dielectric layer over the semiconductor substrate, a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate, and a region including a plurality of embedded nanoparticles in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the plurality of embedded nanoparticles to an externally-applied field.

The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

A semiconductor die is provided, comprising a semiconductor substrate, a dielectric layer over the semiconductor substrate, a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate, and a region including a plurality of embedded nanoparticles in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the plurality of embedded nanoparticles to an externally-applied field.