H01L2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/80001
by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
H01L2224/80001
by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
H01L2224/8038
Bonding interfaces outside the semiconductor or solid-state body
H01L2224/8038
Bonding interfaces outside the semiconductor or solid-state body
H01L2224/804
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/804
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/80438
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
H01L2224/80438
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C